Issued Patents 2004
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6833572 | Electrode materials with improved hydrogen degradation resistance | Fengyan Zhang, Tingkai Li, Hong Ying, Sheng Teng Hsu | 2004-12-21 |
| 6825106 | Method of depositing a conductive niobium monoxide film for MOSFET gates | Wei Gao | 2004-11-30 |
| 6780700 | Method of fabricating deep sub-micron CMOS source/drain with MDD and selective CVD silicide | Katsuji Iguchi, Sheng Teng Hsu, Jer-Shen Maa | 2004-08-24 |
| 6737693 | Ferroelastic integrated circuit device | Tingkai Li, Fengyan Zhang, Sheng Teng Hsu | 2004-05-18 |
| 6720258 | Method of fabricating a nickel silicide on a substrate | Jer-Shen Maa, Douglas J. Tweet, Fengyan Zhang, Sheng Teng Hsu | 2004-04-13 |
| 6689646 | Plasma method for fabricating oxide thin films | Pooran Chandra Joshi, John W. Hartzell, Masahiro Adachi | 2004-02-10 |
| 6686212 | Method to deposit a stacked high-&kgr; gate dielectric for CMOS applications | John F. Conley, Jr., Rajendra Solanki | 2004-02-03 |