RT

Randhir P. S. Thakur

Micron: 16 patents #34 of 948Top 4%
Applied Materials: 2 patents #121 of 720Top 20%
MT Mattson Technology: 1 patents #9 of 28Top 35%
📍 Fremont, CA: #3 of 868 inventorsTop 1%
🗺 California: #31 of 28,370 inventorsTop 1%
Overall (2004): #256 of 270,089Top 1%
19
Patents 2004

Issued Patents 2004

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
6812530 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures Klaus Schuegraf 2004-11-02
6808758 Pulse precursor deposition process for forming layers in semiconductor devices 2004-10-26
6806572 Structure for contact formation using a silicon-germanium alloy 2004-10-19
6803297 Optimal spike anneal ambient Dean Jennings, Sairaju Tallavarjula 2004-10-12
6798026 Conductor layer nitridation Yongjun Jeff Hu, Scott DeBoer 2004-09-28
6797601 Methods for forming wordlines, transistor gates, and conductive interconnects Klaus Schuegraf 2004-09-28
6794703 High pressure reoxidation/anneal of high dielectric constant Scott DeBoer 2004-09-21
6787482 Method to form a DRAM capacitor using low temperature reoxidation Brett Rolfson 2004-09-07
6784052 Method of forming a capacitor with two diffusion barrier layers formed in the same step Klaus Schuegraf 2004-08-31
6773981 Methods of forming capacitors Husam N. Al-Shareef, Scott DeBoer, F. Daniel Gealy 2004-08-10
6737696 DRAM capacitor formulation using a double-sided electrode Scott J. DeBoer, Husam N. Al-Shareef 2004-05-18
6730584 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures Klaus Schuegraf, Carl Marshall Eliot Powell 2004-05-04
6717211 Shallow doped junctions with a variable profile gradation of dopants Fernando Gonzalez 2004-04-06
6699752 Formation of conductive rugged silicon Er-Xuan Ping 2004-03-02
6690044 Approach to avoid buckling BPSG by using an intermediate barrier layer Trung T. Doan, Yauh-Ching Liu 2004-02-10
6682970 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer Garry Mercaldi, Michael Nuttall 2004-01-27
6677247 Method of increasing the etch selectivity of a contact sidewall to a preclean etchant Zheng Yuan, Steve Ghanayem 2004-01-13
6677661 Semiconductive wafer assemblies Scott DeBoer, John T. Moore, Mark Fischer 2004-01-13
6673689 Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same Husam N. Al-Shareef, Scott DeBoer 2004-01-06