YH

Yongjun Jeff Hu

Micron: 18 patents #22 of 948Top 3%
📍 Boise, ID: #6 of 590 inventorsTop 2%
🗺 Idaho: #8 of 1,066 inventorsTop 1%
Overall (2004): #244 of 270,089Top 1%
19
Patents 2004

Issued Patents 2004

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
6831343 Metal gate engineering for surface p-channel devices 2004-12-14
6825113 Asymmetric, double-sided self-aligned silicide and method of forming the same 2004-11-30
6806573 Low angle, low energy physical vapor deposition of alloys 2004-10-19
6798026 Conductor layer nitridation Randhir P. S. Thakur, Scott DeBoer 2004-09-28
6797558 Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer Michael Nuttall, Er-Xuan Ping 2004-09-28
6783694 Composition for selectively etching against cobalt silicide Whonchee Lee 2004-08-31
6774022 Method of passivating an oxide surface subjected to a conductive material anneal Zhongze Wang, Li Li 2004-08-10
6759343 Method and composition for selectively etching against cobalt silicide Whonchee Lee 2004-07-06
6753584 Antireflective coating layer 2004-06-22
6750172 Nanometer engineering of metal-support catalysts Er-Xuan Ping 2004-06-15
6743720 Method of manufacturing a portion of a memory by selectively etching to remove metal nitride or metal oxynitride extrusions Gary Chen, Li Li 2004-06-01
6734089 Techniques for improving wordline fabrication of a memory device Satish Bedge, Kevin J. Torek 2004-05-11
6717351 Apparatus and method for forming cold-cathode field emission displays 2004-04-06
6703303 Method of manufacturing a portion of a memory Gary Chen, Li Li 2004-03-09
6693354 Semiconductor structure with substantially etched nitride defects protruding therefrom Gary Chen, Li Li 2004-02-17
6688584 Compound structure for reduced contact resistance Ravi Iyer, Luan C. Tran, Brent Gilgen 2004-02-10
6689685 Process for forming a diffusion barrier material nitride film 2004-02-10
6683357 Semiconductor constructions 2004-01-27
6680246 Process for forming a nitride film 2004-01-20