Issued Patents 2003
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6664157 | Semiconductor integrated circuit device and the method of producing the same | Shinpei Iijima, Yoshitaka Nakamura, Yuichi Matsui, Naruhiko Nakanishi | 2003-12-16 |
| 6583023 | Method for making semiconductor integrated circuits | Yasuhiro Shimamoto, Hiroshi Miki | 2003-06-24 |
| 6576928 | Semiconductor device capacitor with high permittivity tantalum pentoxide/niobium pentoxide dielectric | Shinichiro Kimura, Tomoyuki Hamada | 2003-06-10 |
| 6555429 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Yuichi Matsui, Yasuhiro Shimamoto, Yoshitaka Nakamura, Toshihide Nabatame | 2003-04-29 |
| 6544834 | Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5) | Yasuhiro Sugawara, Shinpei Iijima, Yuzuru Oji, Naruhiko Nakanishi, Misuzu Kanai | 2003-04-08 |
| 6534375 | METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS | Shinpei Iijima, Yuzuru Ohji, Masato Kunitomo, Yuichi Matsui, Hiroyuki Ohta +1 more | 2003-03-18 |
| 6521494 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Yuichi Matsui, Yasuhiro Shimamoto, Yoshitaka Nakamura, Toshihide Nabatame | 2003-02-18 |
| 6509246 | Production of semiconductor integrated circuit | Hiroshi Miki, Yasuhiro Shimamoto, Tomoyuki Hamada | 2003-01-21 |
| 6503791 | Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device | Yuichi Matsui, Yasuhiro Shimamoto, Yoshitaka Nakamura, Toshihide Nabatame | 2003-01-07 |