Issued Patents 2003
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6660578 | High-K dielectric having barrier layer for P-doped devices and method of fabrication | Olov Karlsson, Qi Xiang, Bin Yu, Zoran Krivokapic | 2003-12-09 |
| 6657223 | Strained silicon MOSFET having silicon source/drain regions and method for its fabrication | Qi Xiang | 2003-12-02 |
| 6657276 | Shallow trench isolation (STI) region with high-K liner and method of formation | Olov Karlsson, Bin Yu, Zoran Krivokapic, Qi Xiang | 2003-12-02 |
| 6657267 | Semiconductor device and fabrication technique using a high-K liner for spacer etch stop | Qi Xiang, Olov Karlsson, Bin Yu | 2003-12-02 |
| 6645797 | Method for forming fins in a FinFET device using sacrificial carbon layer | Matthew S. Buynoski, Srikanteswara Dakshina-Murthy, Cyrus E. Tabery, Chih-Yuh Yang, Bin Yu | 2003-11-11 |
| 6630720 | Asymmetric semiconductor device having dual work function gate and method of fabrication | Witold P. Maszara, Qi Xiang | 2003-10-07 |
| 6620671 | Method of fabricating transistor having a single crystalline gate conductor | Joong S. Jeon | 2003-09-16 |
| 6611029 | Double gate semiconductor device having separate gates | Shibly S. Ahmed, Bin Yu | 2003-08-26 |
| 6586808 | Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric | Qi Xiang, Witold P. Maszara | 2003-07-01 |
| 6528858 | MOSFETs with differing gate dielectrics and method of formation | Bin Yu, Qi Xiang, Olov Karlsson, Zoran Krivokapic | 2003-03-04 |