Issued Patents 2002
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6501117 | Static self-refreshing DRAM structure and operating mode | Carl Radens, Ramachandra Divakaruni, Jack A. Mandelman | 2002-12-31 |
| 6495876 | DRAM strap: hydrogen annealing for improved strap resistance in high density trench DRAMS | Ramachandra Divakaruni, Yoichi Takegawa | 2002-12-17 |
| 6429474 | Storage-capacitor electrode and interconnect | Jeffrey P. Gambino, David E. Kotecki, Carl Radens | 2002-08-06 |
| 6426251 | Process for manufacturing a crystal axis-aligned vertical side wall device | Ulrike Gruening, Jack A. Mandelman, Carl Radens | 2002-07-30 |
| 6426526 | Single sided buried strap | Ramachandra Divakaruni, Jack A. Mandelman, Carl Radens | 2002-07-30 |
| 6426252 | Silicon-on-insulator vertical array DRAM cell with self-aligned buried strap | Carl Radens, Tze-Chiang Chen, Bijan Davari, Jack A. Mandelman, Dan Moy +3 more | 2002-07-30 |
| 6403423 | Modified gate processing for optimized definition of array and logic devices on same chip | Mary E. Weybright, Richard A. Conti, Ramachandra Divakaruni, Jeffrey P. Gambino, Peter D. Hoh +1 more | 2002-06-11 |
| 6395594 | Method for simultaneously forming a storage-capacitor electrode and interconnect | David E. Kotecki, Carl Radens, Jeffrey P. Gambino | 2002-05-28 |
| 6388294 | Integrated circuit using damascene gate structure | Carl Radens, Mary E. Weybright | 2002-05-14 |
| 6369419 | Self-aligned near surface strap for high density trench DRAMS | Ramachandra Divakaruni, Jochen Beintner, Jack A. Mandelman, Ulrike Gruening, Johann Alsmeier | 2002-04-09 |
| 6348374 | Process for 4F2 STC cell having vertical MOSFET and buried-bitline conductor structure | Satish D. Athavale, Ramachandra Divakaruni, Ulrike Gruening, Jack A. Mandelman, Carl Radens | 2002-02-19 |
| 6344389 | Self-aligned damascene interconnect | Jeffrey P. Gambino, Carl Radens | 2002-02-05 |
| 6339001 | Formulation of multiple gate oxides thicknesses without exposing gate oxide or silicon surface to photoresist | Jeffrey P. Gambino | 2002-01-15 |