BY

Bin Yu

AM AMD: 72 patents #1 of 1,128Top 1%
AT AT&T: 1 patents #483 of 1,668Top 30%
📍 Beijing, TX: #1 of 24 inventorsTop 5%
Overall (2002): #8 of 266,432Top 1%
73
Patents 2002

Issued Patents 2002

Showing 26–50 of 73 patents

Patent #TitleCo-InventorsDate
6441433 Method of making a multi-thickness silicide SOI device William G. En, Srinath Krishnan, Dong-Hyuk Ju 2002-08-27
6436773 Fabrication of test field effect transistor structure 2002-08-20
6432784 Method of forming L-shaped nitride spacers 2002-08-13
6432763 Field effect transistor having doped gate with prevention of contamination from the gate during implantation 2002-08-13
6429484 Multiple active layer structure and a method of making such a structure 2002-08-06
6426259 Vertical field effect transistor with metal oxide as sidewall gate insulator 2002-07-30
6423647 Formation of dielectric regions of different thicknesses at selective location areas during laser thermal processes 2002-07-23
6423599 Method for fabricating a field effect transistor having dual gates in SOI (semiconductor on insulator) technology 2002-07-23
6420767 Capacitively coupled DTMOS on SOI Srinath Krishnan, John C. Holst 2002-07-16
6420218 Ultra-thin-body SOI MOS transistors having recessed source and drain regions 2002-07-16
6413829 Field effect transistor in SOI technology with schottky-contact extensions 2002-07-02
6414355 Silicon-on-insulator (SOI) chip having an active layer of non-uniform thickness Judy Xilin An, William G. En 2002-07-02
6410371 Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer William G. En, Judy Xilin An, Concetta Riccobene 2002-06-25
6406986 Fabrication of a wide metal silicide on a narrow polysilicon gate structure 2002-06-18
6406951 Fabrication of fully depleted field effect transistor with raised source and drain in SOI technology 2002-06-18
6403433 Source/drain doping technique for ultra-thin-body SOI MOS transistors Jonathan Kluth, Emi Ishida 2002-06-11
6403981 Double gate transistor having a silicon/germanium channel region 2002-06-11
6403434 Process for manufacturing MOS transistors having elevated source and drain regions and a high-k gate dielectric 2002-06-11
6399450 Low thermal budget process for manufacturing MOS transistors having elevated source and drain regions 2002-06-04
6399469 Fabrication of a notched gate structure for a field effect transistor using a single patterning and etch process 2002-06-04
6399427 Formation of ultra-thin active device area on semiconductor on insulator (SOI) substrate 2002-06-04
6395609 Method for fabricating a bipolar junction transistor with tunneling current through the gate of a field effect transistor as base current 2002-05-28
6395589 Fabrication of fully depleted field effect transistor with high-K gate dielectric in SOI technology 2002-05-28
6391695 Double-gate transistor formed in a thermal process 2002-05-21
6391782 Process for forming multiple active lines and gate-all-around MOSFET 2002-05-21