Issued Patents 1997
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5702989 | Method for fabricating a tub structured stacked capacitor for a DRAM cell having a central column | Mong-Song Liang | 1997-12-30 |
| 5677557 | Method for forming buried plug contacts on semiconductor integrated circuits | Shou-Gwo Wuu, Mong-Song Liang, Chung-Hui Su | 1997-10-14 |
| 5668035 | Method for fabricating a dual-gate dielectric module for memory with embedded logic technology | Chung Hsin Fang, Julie Huang, Mong-Song Liang | 1997-09-16 |
| 5668038 | One step smooth cylinder surface formation process in stacked cylindrical DRAM products | Yuan-Chang Huang, Mong-Song Liang | 1997-09-16 |
| 5668380 | Reduced area metal contact to a thin polysilicon layer contact structure having low ohmic resistance | Shou-Gwo Wuu, Mong-Song Liang, Chung-Hui Su | 1997-09-16 |
| 5652174 | Unified stacked contact process for static random access memory (SRAM) having polysilicon load resistors | Shou-Gwo Wuu, Mong-Song Liang, Chung-Hui Su | 1997-07-29 |
| 5646061 | Two-layer polysilicon process for forming a stacked DRAM capacitor with improved doping uniformity and a controllable shallow junction contact | Mong-Song Liang | 1997-07-08 |
| 5607879 | Method for forming buried plug contacts on semiconductor integrated circuits | Shou-Gwo Wuu, Mong-Song Liang, Chung-Hui Su | 1997-03-04 |
| 5607874 | Method for fabricating a DRAM cell with a T shaped storage capacitor | Mong-Song Liang | 1997-03-04 |
| 5591664 | Method of increasing the capacitance area in DRAM stacked capacitors using a simplified process | Jin-Yuan Lee | 1997-01-07 |