Issued Patents 1994
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5376405 | Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers | Trung T. Doan | 1994-12-27 |
| 5376593 | Method for fabricating stacked layer Si.sub.3 N.sub.4 for low leakage high capacitance films using rapid thermal nitridation | Randhir P. S. Thakur | 1994-12-27 |
| 5368687 | Semiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafers | Donald L. Westmoreland, Pierre C. Fazan | 1994-11-29 |
| 5364187 | System for repeatable temperature measurement using surface reflectivity | Randhir P. S. Thakur, Annette L. Martin | 1994-11-15 |
| 5358894 | Oxidation enhancement in narrow masked field regions of a semiconductor wafer | Pierre C. Fazan, Viju K. Mathews, Mohammed Anjum, Hiang C. Chan | 1994-10-25 |
| 5350236 | Method for repeatable temperature measurement using surface reflectivity | Randhir P. S. Thakur, Annette L. Martin | 1994-09-27 |
| 5344792 | Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi.sub.2 | Trung T. Doan | 1994-09-06 |
| 5341016 | Low resistance device element and interconnection structure | Kirk D. Prall, Scott Meikle | 1994-08-23 |
| 5335138 | High dielectric constant capacitor and method of manufacture | Pierre C. Fazan | 1994-08-02 |
| 5332689 | Method for depositing low bulk resistivity doped films | Charles L. Turner | 1994-07-26 |
| 5320880 | Method of providing a silicon film having a roughened outer surface | Trung T. Doan | 1994-06-14 |
| 5318927 | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials | Donald L. Westmoreland, Trung T. Doan | 1994-06-07 |
| 5300155 | IC chemical mechanical planarization process incorporating slurry temperature control | Chris C. Yu | 1994-04-05 |
| 5298463 | Method of processing a semiconductor wafer using a contact etch stop | David A. Cathey | 1994-03-29 |
| 5278100 | Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers | Trung T. Doan | 1994-01-11 |