Issued Patents All Time
Showing 76–98 of 98 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5449638 | Process on thickness control for silicon-on-insulator technology | Gary Hong, H. J. Wu, Lawrence Lin | 1995-09-12 |
| 5436185 | Method of fabricating a ROM device with a negative code implant mask | Gary Hong | 1995-07-25 |
| 5436186 | Process for fabricating a stacked capacitor | Gary Hong, Ming-Tzong Yang | 1995-07-25 |
| 5434108 | Grounding method to eliminate the antenna effect in VLSI process | Joe Ko | 1995-07-18 |
| 5430673 | Buried bit line ROM with low bit line resistance | Gary Hong | 1995-07-04 |
| 5429975 | Method of implanting during manufacture of ROM device | Shing-Ren Sheu, Chen-Hui Chung | 1995-07-04 |
| 5429974 | Post passivation mask ROM programming method | Shing-Ren Shev, Kuan-Cheng Su, Chen-Hui Chung | 1995-07-04 |
| 5429980 | Method of forming a stacked capacitor using sidewall spacers and local oxidation | Ming-Tzong Yang, Anchor Chen | 1995-07-04 |
| 5430328 | Process for self-align contact | — | 1995-07-04 |
| 5418175 | Process for flat-cell mask ROM integrated circuit | Gary Hong | 1995-05-23 |
| 5418176 | Process for producing memory devices having narrow buried N+ lines | Ming-Tzong Yang, Cheng-Han Huang | 1995-05-23 |
| 5416036 | Method of improvement ESD for LDD process | — | 1995-05-16 |
| 5416038 | Method for producing semiconductor device with two different threshold voltages | Sun-Chieh Chien, Lee Chung Yuan, Tzong-Shien Wu | 1995-05-16 |
| 5413950 | Method of forming a DRAM stacked capacitor cell | Anchor Chen, Min-Tzong Yang, Gary Hong | 1995-05-09 |
| 5393233 | Process for fabricating double poly high density buried bit line mask ROM | Gary Hong, Ming-Tzong Yang | 1995-02-28 |
| 5380676 | Method of manufacturing a high density ROM | Ming-Tzong Yang, Te-Sun Wu | 1995-01-10 |
| 5380675 | Method for making closely spaced stacked capacitors on DRAM chips | Gary Hong | 1995-01-10 |
| 5380673 | Dram capacitor structure | Ming-Tzong Yang, Anchor Chen | 1995-01-10 |
| 5374565 | Method for ESD protection improvement | Joe Ko | 1994-12-20 |
| 5369048 | Stack capacitor DRAM cell with buried bit-line and method of manufacture | — | 1994-11-29 |
| 5364808 | Method of making a buried bit line DRAM cell | Ming-Tzong Yang, Gary Hong | 1994-11-15 |
| 5318921 | Method for making a high density ROM or EPROM integrated circuit | Ming-Tzong Yang | 1994-06-07 |
| 5115296 | Preferential oxidization self-aligned contact technology | Cheng-Han Huang | 1992-05-19 |