Issued Patents All Time
Showing 51–75 of 98 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5572056 | High density ROM | Ming-Tzong Yang, Te-Sun Wu | 1996-11-05 |
| 5567970 | Post metal mask ROM with thin glass dielectric layer formed over word lines | Shing-Ren Sheu, Chen-Hui Chung | 1996-10-22 |
| 5559352 | ESD protection improvement | Joe Ko | 1996-09-24 |
| 5554560 | Method for forming a planar field oxide (fox) on substrates for integrated circuit | Sun-Chieh Chien, Ming-Hua Liu | 1996-09-10 |
| 5536670 | Process for making a buried bit line memory cell | — | 1996-07-16 |
| 5529942 | Self-aligned coding process for mask ROM | Gary Hong | 1996-06-25 |
| 5529943 | Method of making buried bit line ROM with low bit line resistance | Gary Hong | 1996-06-25 |
| 5521113 | Process for forming a butting contact through a gate electrode | Sun-Chieh Chien | 1996-05-28 |
| 5516713 | Method of making high coupling ratio NAND type flash memory | Ming-Tzong Yang | 1996-05-14 |
| 5510279 | Method of fabricating an asymmetric lightly doped drain transistor device | Sun-Chieh Chien, Jengping Lin | 1996-04-23 |
| 5506438 | Semiconductor device with two different threshold voltages | Sun-Chieh Chien, Lee Chung Yuan, Tzong-Shien Wu | 1996-04-09 |
| 5496776 | Spin-on-glass planarization process with ion implantation | Sun-Cheih Chien, Yu-Ju Liu | 1996-03-05 |
| 5494839 | Dual photo-resist process for fabricating high density DRAM | Gary Hong | 1996-02-27 |
| 5488009 | Post-titanium nitride mask ROM programming method | Yi-Chung Shen, Shing-Ren Sheu, Chen-Hui Chung | 1996-01-30 |
| 5484743 | Self-aligned anti-punchthrough implantation process | Joe Ko | 1996-01-16 |
| 5480822 | Method of manufacture of semiconductor memory device with multiple, orthogonally disposed conductors | Ming-Tzong Yang | 1996-01-02 |
| 5472899 | Process for fabrication of an SRAM cell having a highly doped storage node | Sun-Chieh Chien | 1995-12-05 |
| 5472898 | Process for making a mask ROM with self-aligned coding technology | Gary Hong | 1995-12-05 |
| 5468980 | Buried bit line DRAM cell | Ming-Tzong Yang, Gary Hong | 1995-11-21 |
| 5460999 | Method for making fin-shaped stack capacitors on DRAM chips | Gary Hong | 1995-10-24 |
| 5461011 | Method for reflowing and annealing borophosphosilicate glass to prevent BPO.sub.4 crystal formation | Edward Houn | 1995-10-24 |
| 5461251 | Symmetric SRAM cell with buried N+ local interconnection line | Ming-Tzong Yang | 1995-10-24 |
| 5457061 | Method of making top floating-gate flash EEPROM structure | Gary Hong | 1995-10-10 |
| 5455444 | Double polysilicon electrostatic discharge protection device for SRAM and DRAM memory devices | — | 1995-10-03 |
| 5453392 | Process for forming flat-cell mask ROMS | Gary Hong | 1995-09-26 |