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USPTO Patent Rankings Data through Dec 31, 2025
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Jengping Lin — 15 Patents

UMUnited Microelectronics: 12 patents #493 of 4,560Top 15%
NTNanya Technology: 2 patents #292 of 775Top 40%
Daxi District, TW: #130 of 2,811 inventorsTop 5%
Overall (All Time): #307,048 of 4,157,543Top 8%
15 Patents All Time
Jengping Lin has been granted 15 US patents while listed as an inventor at United Microelectronics. The first was granted in 1996 and the most recent in October 2001. Jengping Lin ranks #307,048 of 4,157,543 US inventors in our database (top 7.4%). Patent records list Jengping Lin in Daxi District, TW.

Issued Patents All Time

Showing 1–15 of 15 patents

Patent #TitleCo-InventorsDate
6303491 Method for fabricating self-aligned contact hole Tzu-Ching Tsai, Lin-Chin Su, Tse-Yao Huang 2001-10-16
6215546 Method of optical correction for improving the pattern shrinkage caused by scattering of the light Ronfu Chu, Quentin Chen, Chungwei Hsu 2001-04-10
6107175 Method of fabricating self-aligned contact Han-Chung Lin, Sun-Chieh Chien 2000-08-22
5966604 Method of manufacturing MOS components having lightly doped drain structures Han-Chung Lin, Sun-Chieh Chien 1999-10-12
5679602 Method of forming MOSFET devices with heavily doped local channel stops Sun-Chieh Chien 1997-10-21
5663586 Fet device with double spacer 1997-09-02
5652160 Method of fabricating a buried contact structure with WSi.sub.x sidewall spacers Sun-Chieh Chien 1997-07-29
5641698 Method of fabricating FET device with double spacer 1997-06-24
5612239 Use of oxide spacers formed by liquid phase deposition Sun-Chieh Chien 1997-03-18
5550079 Method for fabricating silicide shunt of dual-gate CMOS device 1996-08-27
5550074 Process for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift mask 1996-08-27
5547900 Method of fabricating a self-aligned contact using a liquid-phase oxide-deposition process 1996-08-20
5510279 Method of fabricating an asymmetric lightly doped drain transistor device Sun-Chieh Chien, Chen-Chiu Hsue 1996-04-23
5504038 Method for selective tungsten sidewall and bottom contact formation Sun-Chieh Chien 1996-04-02
5502009 Method for fabricating gate oxide layers of different thicknesses 1996-03-26