Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12139813 | SiC wafer and manufacturing method for SiC wafer | Masatake Nagaya, Takahiro KANDA, Takeshi Okamoto, Satoru Nogami, Makoto Kitabatake | 2024-11-12 |
| 11261539 | Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method | Yusuke Sudo, Masato Shinohara, Youji Teramoto, Takuya Sakaguchi, Satoru Nogami +1 more | 2022-03-01 |
| 10665465 | Surface treatment method for SiC substrate | Tadaaki Kaneko, Koji Ashida, Yasunori Kutsuma, Masato Shinohara, Youji Teramoto +2 more | 2020-05-26 |
| 10665485 | Heat treatment vessel for single-crystal silicon carbide substrate and etching method | Masato Shinohara, Norihito Yabuki, Satoru Nogami | 2020-05-26 |
| 10388536 | Etching method for SiC substrate and holding container | Masato Shinohara, Youji Teramoto, Norihito Yabuki, Satoru Nogami, Tadaaki Kaneko +2 more | 2019-08-20 |
| 10358741 | Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide | Satoru Nogami, Tsuyoshi Matsumoto | 2019-07-23 |
| 10014176 | SiC substrate treatment method | Norihito Yabuki, Satoru Nogami | 2018-07-03 |
| 9991175 | Method for estimating depth of latent scratches in SiC substrates | Norihito Yabuki, Satoru Nogami | 2018-06-05 |
| 9725822 | Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph | Satoru Nogami, Tsuyoshi Matsumoto | 2017-08-08 |
| 9704733 | Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus | Norihito Yabuki, Satoru Nogami | 2017-07-11 |
| 9644894 | Semiconductor device manufacturing apparatus | Norihito Yabuki, Satoru Nogami | 2017-05-09 |
| 9570306 | Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate | Norihito Yabuki, Satoru Nogami | 2017-02-14 |
| 9447517 | Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon | Satoru Nogami, Tsuyoshi Matsumoto | 2016-09-20 |
| 9252206 | Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide | Satoru Nogami, Tsuyoshi Matsumoto | 2016-02-02 |