Issued Patents All Time
Showing 1–25 of 41 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12421624 | SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof | — | 2025-09-23 |
| 12398038 | Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method | Daichi Dojima, Moeko Matsubara, Yoshitaka Nishio | 2025-08-26 |
| 12385158 | Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes | Daichi Dojima | 2025-08-12 |
| 12362175 | Method for manufacturing SiC substrate | — | 2025-07-15 |
| 12325930 | Manufacturing device for SiC semiconductor substrate | Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto | 2025-06-10 |
| 12325936 | Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing | Daichi Dojima, Moeko Matsubara, Yoshitaka Nishio | 2025-06-10 |
| 12320030 | Method of using sic container | Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto | 2025-06-03 |
| 12255073 | Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing | Daichi Dojima | 2025-03-18 |
| 12247319 | Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material | Kiyoshi Kojima | 2025-03-11 |
| 12237377 | SiC semiconductor substrate, and, production method therefor and production device therefor | Koji Ashida, Tomoya Ihara, Daichi Dojima | 2025-02-25 |
| 12237378 | Method for manufacturing SiC substrate | Masatake Nagaya | 2025-02-25 |
| 12209328 | Method of manufacturing semiconductor substrate and epitaxial growth method | — | 2025-01-28 |
| 12131960 | Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method | Daichi Dojima, Koji Ashida, Tomoya Ihara | 2024-10-29 |
| 12098476 | Method for producing a SiC substrate via an etching step, growth step, and peeling step | Kiyoshi Kojima | 2024-09-24 |
| 12065758 | Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrate | Natsuki Yoshida, Kazufumi Aoki | 2024-08-20 |
| 12020928 | SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same | Koji Ashida, Tomoya Ihara, Daichi Dojima | 2024-06-25 |
| 12014939 | Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate | — | 2024-06-18 |
| 11972949 | SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate | Natsuki Yoshida, Kazufumi Aoki | 2024-04-30 |
| 11952678 | Method for manufacturing etched SiC substrate and grown SiC substrate by material tranportation and method for epitaxial growth by material transportation | — | 2024-04-09 |
| 11955354 | Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate | — | 2024-04-09 |
| 11932967 | SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal wafer | — | 2024-03-19 |
| 11365491 | Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrate | Yasunori Kutsuma, Daichi Dojima | 2022-06-21 |
| 11359307 | Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer | Yasunori Kutsuma, Koji Ashida, Ryo Hashimoto | 2022-06-14 |
| 11081347 | Method for manufacturing silicon-carbide semiconductor element | Noboru Ohtani, Kenta Hagiwara | 2021-08-03 |
| 10847342 | Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrate | Koji Ashida | 2020-11-24 |