DM

David J. McElroy

TI Texas Instruments: 56 patents #113 of 12,488Top 1%
Micron: 13 patents #1,214 of 6,345Top 20%
DG Dekalb Genetics: 11 patents #5 of 108Top 5%
CF Cornell Research Foundation: 3 patents #276 of 1,638Top 20%
University of California: 1 patents #8,022 of 18,278Top 45%
📍 Houston, TX: #87 of 21,073 inventorsTop 1%
🗺 Texas: #633 of 125,132 inventorsTop 1%
Overall (All Time): #20,704 of 4,157,543Top 1%
84
Patents All Time

Issued Patents All Time

Showing 26–50 of 84 patents

Patent #TitleCo-InventorsDate
6194636 Maize RS324 promoter and methods for use thereof Emil Orozco, Lucille B. Laccetti 2001-02-27
6049483 Nonvolatile memory device having program and/or erase voltage clamp John F. Schreck, Brian W. Huber 2000-04-11
5684239 Monocot having dicot wound-inducible promoter Ray J. Wu, Deping Xu 1997-11-04
5641876 Rice actin gene and promoter Ray J. Wu 1997-06-24
5641701 Method for fabricating a semiconductor device with laser programable fuses Hideyuki Fukuhara, Yoichi Miyai 1997-06-24
5523249 Method of making an EEPROM cell with separate erasing and programming regions Manzur Gill, Sung-Wei Lin, Inn K. Lee 1996-06-04
5412603 Method and circuitry for programming floating-gate memory cell using a single low-voltage supply John F. Schreck, Cetin Kaya 1995-05-02
5334550 Method of producing a self-aligned window at recessed intersection of insulating regions Sung-Wei Lin, Manzur Gill 1994-08-02
5313427 EEPROM array with narrow margin of voltage thresholds after erase John F. Schreck, Pradeep L. Shah 1994-05-17
5313432 Segmented, multiple-decoder memory array and method for programming a memory array Sung-Wei Lin, John F. Schreck, Phat C. Truong, Harvey J. Stiegler, Benjamin H. Ashmore, Jr. +1 more 1994-05-17
5287315 Skewed reference to improve ones and zeros in EPROM arrays John F. Schreck, Debra J. Dolby, Eddie Hearl Breashears, John Howard MacPeak 1994-02-15
5177705 Programming of an electrically-erasable, electrically-programmable, read-only memory array Sebastiano D'Arrigo, Manzur Gill, Sung-Wei Lin 1993-01-05
5173436 Method of manufacturing an EEPROM with trench-isolated bitlines Manzur Gill, Sebastiano D'Arrigo 1992-12-22
5155055 Method of making an electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel Manzur Gill, Sung-Wei Lin, C. Rinn Cleavelin 1992-10-13
5151760 Integrated circuit with improved capacitive coupling Manzur Gill 1992-09-29
5110753 Cross-point contact-free floating-gate memory array with silicided buried bitlines Manzur Gill 1992-05-05
5057446 Method of making an EEPROM with improved capacitive coupling between control gate and floating gate Manzur Gill 1991-10-15
5051795 EEPROM with trench-isolated bitlines Manzur Gill, Sebastiano D'Arrigo 1991-09-24
RE33694 Dynamic memory array with segmented bit lines 1991-09-17
5047981 Bit and block erasing of an electrically erasable and programmable read-only memory array Manzur Gill, Sung-Wei Lin, Iano D'Arrigo 1991-09-10
5025494 Cross-point contact-free floating-gate memory array with silicided buried bitlines Manzur Gill 1991-06-18
5014099 Dynamic RAM cell with trench capacitor and trench transistor 1991-05-07
5008721 Electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel Manzur Gill, Sung-Wei Lin, C. Rinn Cleavelin 1991-04-16
4908797 Dynamic memory array with quasi-folded bit lines 1990-03-13
4896293 Dynamic ram cell with isolated trench capacitors 1990-01-23