SD

Sebastiano D'Arrigo

TI Texas Instruments: 31 patents #311 of 12,488Top 3%
Overall (All Time): #119,990 of 4,157,543Top 3%
31
Patents All Time

Issued Patents All Time

Showing 1–25 of 31 patents

Patent #TitleCo-InventorsDate
6525410 Integrated circuit wireless tagging Tito Gelsomini, Giulio Marotta 2003-02-25
6368901 Integrated circuit wireless tagging Tito Gelsomini, Giulio Marotta 2002-04-09
5504708 Flash EEPROM array with P-tank insulated from substrate by deep N-tank Giovanni Santin, Giovanni Naso, Michael C. Smayling 1996-04-02
5475644 Crosspoint memory Gerard Chauvel 1995-12-12
5411908 Flash EEPROM array with P-tank insulated from substrate by deep N-tank Giovanni Santin, Giovanni Naso, Michael C. Smayling 1995-05-02
5265052 Wordline driver circuit for EEPROM memory cell Giuliano Imondi, Sung-Wei Lin 1993-11-23
5187683 Method for programming EEPROM memory arrays Manzur Gill, Sung-Wei Lin 1993-02-16
5177705 Programming of an electrically-erasable, electrically-programmable, read-only memory array David J. McElroy, Manzur Gill, Sung-Wei Lin 1993-01-05
5173436 Method of manufacturing an EEPROM with trench-isolated bitlines Manzur Gill, David J. McElroy 1992-12-22
5168174 Negative-voltage charge pump with feedback control Giovanni Naso, Giovanni Santin 1992-12-01
5156991 Fabricating an electrically-erasable, electrically-programmable read-only memory having a tunnel window insulator and thick oxide isolation between wordlines Manzur Gill, Sung-Wei Lin 1992-10-20
5157281 Level-shifter circuit for integrated circuits Giovanni Santin, Michael C. Smayling 1992-10-20
5134449 Nonvolatile memory cell with field-plate switch Manzur Gill 1992-07-28
5100819 Method of making electrically programmable and erasable memory cells with field plate conductor defined drain regions Manzur Gill 1992-03-31
5081055 Method of making electrically-erasable, electrically-programmable read-only memory cell having a tunnel window insulator and forming implanted regions for isolation between wordlines Manzur Gill, Sung-Wei Lin 1992-01-14
5051795 EEPROM with trench-isolated bitlines Manzur Gill, David J. McElroy 1991-09-24
5032533 Method of making a nonvolatile memory cell with field-plate switch Manzur Gill 1991-07-16
5017980 Electrically-erasable, electrically-programmable read-only memory cell Manzur Gill, Sung-Wei Lin 1991-05-21
5012307 Electrically-erasable, electrically-programmable read-only memory Manzur Gill, Sung-Wei Lin 1991-04-30
4947222 Electrically programmable and erasable memory cells with field plate conductor defined drain regions Manzur Gill 1990-08-07
4939558 EEPROM memory cell and driving circuitry Michael C. Smayling 1990-07-03
4823318 Driving circuitry for EEPROM memory cell Giuliano Imondi, Sung-Wei Lin, Manzur Gill 1989-04-18
4823320 Electrically programmable fuse circuit for an integrated-circuit chip Michael C. Smayling, Giuliano Imondi, Sossio Vergara 1989-04-18
4804637 EEPROM memory cell and driving circuitry Michael C. Smayling 1989-02-14
4742492 EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor Michael C. Smayling 1988-05-03