Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6624073 | Optimized TaCN thin film diffusion barrier for copper metallization | Hao-Yi Tsai | 2003-09-23 |
| 6359160 | MOCVD molybdenum nitride diffusion barrier for CU metallization | Hien-Tien Chiu | 2002-03-19 |
| 6294819 | CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET | — | 2001-09-25 |
| 6171900 | CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET | — | 2001-01-09 |
| 6150209 | Leakage current reduction of a tantalum oxide layer via a nitrous oxide high density annealing procedure | Jiann-Shing Lee | 2000-11-21 |
| 6114242 | MOCVD molybdenum nitride diffusion barrier for Cu metallization | Hien-Tien Chiu | 2000-09-05 |
| 5930584 | Process for fabricating low leakage current electrode for LPCVD titanium oxide films | Tsai-Fu Chen | 1999-07-27 |
| 5880040 | Gate dielectric based on oxynitride grown in N.sub.2 O and annealed in NO | Chun-Hon Chen, Lee-Wei Yen, Chun-Jung Lin | 1999-03-09 |
| 5841186 | Composite dielectric films | Tsai-Fu Chen | 1998-11-24 |
| 5668054 | Process for fabricating tantalum nitride diffusion barrier for copper matallization | Hien-Tien Chiu, Ming-Hsing Tsai | 1997-09-16 |
| 5652166 | Process for fabricating dual-gate CMOS having in-situ nitrogen-doped polysilicon by rapid thermal chemical vapor deposition | Lin Wang | 1997-07-29 |