MY

Ming-Hua Yu

TSMC: 114 patents #208 of 12,232Top 2%
CD Com Dev: 1 patents #33 of 86Top 40%
FC Fulian Precision Electronics (Tianjin) Co.: 1 patents #77 of 156Top 50%
Overall (All Time): #10,643 of 4,157,543Top 1%
116
Patents All Time

Issued Patents All Time

Showing 101–116 of 116 patents

Patent #TitleCo-InventorsDate
8530316 Method for fabricating a semiconductor device Yu-Hung Cheng, Jhi-Cherng Lu, Chii-Horng Li, Tze-Liang Lee 2013-09-10
8481402 Epitaxy silicon on insulator (ESOI) Tze-Liang Lee, Pang-Yen Tsai 2013-07-09
8377784 Method for fabricating a semiconductor device Yu-Hung Cheng, Jhi-Cherng Lu, Chii-Horng Li, Tze-Liang Lee 2013-02-19
8344447 Silicon layer for stopping dislocation propagation Hsien-Hsin Lin, Weng Chang, Chien-Chang Su, Kuan-Yu Chen, Hsueh-Chang Sung 2013-01-01
8274071 MOS devices with partial stressor channel Mong-Song Liang, Tze-Liang Lee, Jr.-Hung Li 2012-09-25
8253177 Strained channel transistor Tai-Chun Huang 2012-08-28
8168501 Source/drain strained layers Ling-Yen Yeh, Tze-Liang Lee 2012-05-01
8049277 Epitaxy silicon on insulator (ESOI) Tze-Liang Lee, Pang-Yen Tsai 2011-11-01
7973337 Source/drain strained layers Ling-Yen Yeh, Tze-Liang Lee 2011-07-05
7868317 MOS devices with partial stressor channel Mong-Song Liang, Tze-Liang Lee, Jr-Hung Li 2011-01-11
7803690 Epitaxy silicon on insulator (ESOI) Tze-Liang Lee, Pang-Yen Tsai 2010-09-28
7781799 Source/drain strained layers Ling-Yen Yeh, Tze-Liang Lee 2010-08-24
7700452 Strained channel transistor Tai-Chun Huang 2010-04-20
7554110 MOS devices with partial stressor channel Mong-Song Liang, Tze-Liang Lee, Jr-Hung Li 2009-06-30
7494884 SiGe selective growth without a hard mask Hsien-Hsin Lin, Li-Te Lin, Tze-Liang Lee 2009-02-24
6573189 Manufacture method of metal bottom ARC Shih-Chi Lin, Szu-An Wu 2003-06-03