MP

Matthias Passlack

TSMC: 58 patents #552 of 12,232Top 5%
FS Freeescale Semiconductor: 19 patents #113 of 3,767Top 3%
Motorola: 11 patents #806 of 12,470Top 7%
AT AT&T: 3 patents #5,550 of 18,772Top 30%
📍 Hayward, CA: #11 of 1,120 inventorsTop 1%
🗺 California: #2,676 of 386,348 inventorsTop 1%
Overall (All Time): #17,404 of 4,157,543Top 1%
91
Patents All Time

Issued Patents All Time

Showing 76–91 of 91 patents

Patent #TitleCo-InventorsDate
6914012 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same Nicholas W. Medendorp, Jr. 2005-07-05
6756320 Method of forming article comprising an oxide layer on a GaAs-based semiconductor structure Nicholas W. Medendorp, Jr. 2004-06-29
6359294 Insulator-compound semiconductor interface structure Jun Wang, Jonathan K. Abrokwah, Zhiyi Jimmy Yu 2002-03-19
6159834 Method of forming a gate quality oxide-compound semiconductor structure Zhiyi Yu, Brian Bowers, Corey Overgaard, Ravindranath Droopad, Jonathan K. Abrokwah 2000-12-12
6094295 Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication Jonathan K. Abrokwah, Zhiyi Jimmy Yu 2000-07-25
6030453 III-V epitaxial wafer production Jonathan K. Abrokwah, Ravi Droopad, Corey Overgaard 2000-02-29
6025281 Passivation of oxide-compound semiconductor interfaces Jonathan K. Abrokwah, Sandeep Pendharkar, Stephen B. Clemens, Jimmy Z. Yu, Brian Bowers 2000-02-15
5945718 Self-aligned metal-oxide-compound semiconductor device and method of fabrication Jonathan K. Abrokwah, Zhiyi Jimmy Yu 1999-08-31
5907792 Method of forming a silicon nitride layer Ravi Droopad, Jonathan K. Abrokwah, Zhiyi Jimmy Yu 1999-05-25
5904553 Fabrication method for a gate quality oxide-compound semiconductor structure Jonathan K. Abrokwah, Ravi Droopad, Brian Bowers 1999-05-18
5902130 Thermal processing of oxide-compound semiconductor structures Jonathan K. Abrokwah, Zhiyi Jimmy Yu 1999-05-11
5821171 Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article Minghwei Hong, Jueinai Kwo, Joseph Petrus Mannaerts, Fan Ren, George J. Zydzik 1998-10-13
5665658 Method of forming a dielectric layer structure 1997-09-09
5597768 Method of forming a Ga.sub.2 O.sub.3 dielectric layer Jonathan K. Abrokwah 1997-01-28
5550089 Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd.sub.3 Ga.sub.5 O.sub.12 source. Niloy K. Dutta, Russell J. Fischer, Neil Hunt, Erdmann F. Schubert, George J. Zydzik 1996-08-27
5451548 Electron beam deposition of gallium oxide thin films using a single high purity crystal source Neil Hunt, Erdmann F. Schubert, George J. Zydzik 1995-09-19