JK

Jueinai Kwo

AT AT&T: 6 patents #3,053 of 18,772Top 20%
TSMC: 4 patents #4,745 of 12,232Top 40%
AG Agere Systems Guardian: 3 patents #85 of 810Top 15%
AS Agere Systems: 2 patents #639 of 1,849Top 35%
NU National Taiwan University: 2 patents #404 of 2,195Top 20%
NU National Tsing Hua University: 1 patents #672 of 2,036Top 35%
📍 Baoshan, NJ: #3 of 5 inventorsTop 60%
Overall (All Time): #291,013 of 4,157,543Top 7%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
11615955 Material having single crystal perovskite, device including the same, and manufacturing method thereof Bo-Yu YANG, Minghwei Hong, Yen-Hsun Lin, Keng-Yung Lin, Hsien-Wen WAN +2 more 2023-03-28
11081339 Single-crystal rare earth oxide grown on III-V compound Kuanhsiung Chen, Minghwei Hong, Yen-Hsun Lin, Keng-Yung Lin 2021-08-03
10755924 Material having single crystal perovskite, device including the same, and manufacturing method thereof Bo-Yu YANG, Minghwei Hong, Yen-Hsun Lin, Keng-Yung Lin, Hsien-Wen WAN +2 more 2020-08-25
10283349 Single-crystal rare earth oxide grown on III-V compound Kuanhsiung Chen, Minghwei Hong, Yen-Hsun Lin, Keng-Yung Lin 2019-05-07
7235467 Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate Ming-Hwei Hong, Chih-Ping Chen, Shiang-Pi Chang, Wei-Chin Lee 2007-06-26
6495407 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Minghwei Hong, Jenn-Ming Kuo, Joseph Petrus Mannaerts, Yu-Chi Wang 2002-12-17
6480633 Electro-optic device including a buffer layer of transparent conductive material Robert McLemore Fleming, Rafael Nathan Kleiman, John W. Osenbach, Gordon Albert Thomas 2002-11-12
6469357 Article comprising an oxide layer on a GaAs or GaN-based semiconductor body Minghwei Hong, Ahmet Refik Kortan, Joseph Petrus Mannaerts 2002-10-22
6404027 High dielectric constant gate oxides for silicon-based devices Minghwei Hong, Ahmet Refik Kortan, Joseph Petrus Mannaerts 2002-06-11
6271069 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Young-Kai Chen, Alfred Yi Cho, William Scott Hobson, Minghwei Hong, Jenn-Ming Kuo +2 more 2001-08-07
5962883 Article comprising an oxide layer on a GaAs-based semiconductor body Minghwei Hong, Donald W. Murphy 1999-10-05
5948216 Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers Robert J. Cava, Shang-Yun Hou, Eric W. Seelig, Roderick K. Watts 1999-09-07
5821171 Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article Minghwei Hong, Joseph Petrus Mannaerts, Matthias Passlack, Fan Ren, George J. Zydzik 1998-10-13
5628933 Transparent conductors comprising zinc-indium-oxide and methods for making films Sue A. Carter, Robert J. Cava, Julia Mae Phillips, Gordon Albert Thomas 1997-05-13
5523587 Method for low temperature growth of epitaxial silicon and devices produced thereby 1996-06-04
5473456 Method for growing transparent conductive gallium-indium-oxide films by sputtering Robert J. Cava, Gordon Albert Thomas 1995-12-05