Issued Patents All Time
Showing 51–75 of 91 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9214555 | Barrier layer for FinFET channels | Richard Kenneth Oxland, Mark van Dal, Martin Christopher Holland, Georgios Vellianitis | 2015-12-15 |
| 9209180 | Field effect transistor with conduction band electron channel and uni-terminal response | — | 2015-12-08 |
| 9123645 | Methods of making semiconductor devices with low leakage Schottky contacts | Bruce M. Green, Haldane S. Henry, Chun-Li Liu, Karen E. Moore | 2015-09-01 |
| 8916927 | Vertical tunnel field effect transistor (FET) | Krishna Kumar Bhuwalka, Gerben Doornbos | 2014-12-23 |
| 8847280 | Insulated gate field effect transistors | Jonathan K. Abrokwah, Ravindranath Droopad | 2014-09-30 |
| 8802531 | Split-channel transistor and methods for forming the same | Krishna Kumar Bhuwalka, Gerben Doornbos | 2014-08-12 |
| 8735903 | Density of states engineered field effect transistor | — | 2014-05-27 |
| 8604518 | Split-channel transistor and methods for forming the same | Krishna Kumar Bhuwalka, Gerben Doornbos | 2013-12-10 |
| 8592878 | Semiconductor devices with low leakage Schottky contacts | Bruce M. Green, Haldane S. Henry, Chun-Li Liu, Karen E. Moore | 2013-11-26 |
| 8471329 | Tunnel FET and methods for forming the same | Krishna Kumar Bhuwalka, Gerben Doornbos | 2013-06-25 |
| 8288798 | Step doping in extensions of III-V family semiconductor devices | — | 2012-10-16 |
| 8105925 | Method for forming an insulated gate field effect device | Jonathan K. Abrokwah, Ravindranath Droopad | 2012-01-31 |
| 7935620 | Method for forming semiconductor devices with low leakage Schottky contacts | Bruce M. Green, Haldane S. Henry, Chun-Li Liu, Karen E. Moore | 2011-05-03 |
| 7842587 | III-V MOSFET fabrication and device | Jonathan K. Abrokwah, Karthik Rajagopalan, Haiping Zhou, Richard J. Hill, Xu Li +3 more | 2010-11-30 |
| 7799647 | MOSFET device featuring a superlattice barrier layer and method | Ravindranath Droopad, Karthik Rajagopalan | 2010-09-21 |
| 7692224 | MOSFET structure and method of manufacture | Ravindranath Droopad | 2010-04-06 |
| 7682912 | III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same | Ravindranath Droopad, Karthik Rajagopalan | 2010-03-23 |
| 7442654 | Method of forming an oxide layer on a compound semiconductor structure | Ravindranath Droopad | 2008-10-28 |
| 7432565 | III-V compound semiconductor heterostructure MOSFET device | — | 2008-10-07 |
| 7429506 | Process of making a III-V compound semiconductor heterostructure MOSFET | — | 2008-09-30 |
| 7276456 | Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same | Nicholas W. Medendorp, Jr. | 2007-10-02 |
| 7253455 | pHEMT with barrier optimized for low temperature operation | Bruce M. Green, Olin L. Hartin, Ellen Lan, Philip Hsin-hua Li, Monte G. Miller +2 more | 2007-08-07 |
| 7202182 | Method of passivating oxide/compound semiconductor interface | Nicholas W. Medendorp, Jr. | 2007-04-10 |
| 7119381 | Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices | — | 2006-10-10 |
| 6963090 | Enhancement mode metal-oxide-semiconductor field effect transistor | Olin L. Hartin, Marcus Ray, Nicholas W. Medendorp, Jr. | 2005-11-08 |