Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12027526 | Breakdown voltage capability of high voltage device | Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei | 2024-07-02 |
| 11987891 | Sensor in an internet-of-things | Ming-Ta Lei, Chia-Hua Chu, Tung-Tsun Chen, Chun-Wen Cheng | 2024-05-21 |
| 11508757 | Breakdown voltage capability of high voltage device | Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei | 2022-11-22 |
| 11414763 | Manufacturing method of sensor in an internet-of-things | Ming-Ta Lei, Chia-Hua Chu, Tung-Tsun Chen, Chun-Wen Cheng | 2022-08-16 |
| 11349025 | Multi-channel device to improve transistor speed | — | 2022-05-31 |
| 10508345 | Sensor in an internet-of-things and manufacturing method of the same | Ming-Ta Lei, Chia-Hua Chu, Tung-Tsun Chen, Chun-Wen Cheng | 2019-12-17 |
| 10014288 | Ultra high voltage electrostatic discharge protection device with current gain | Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei | 2018-07-03 |
| 9865748 | Semiconductor structure and method for manufacturing the same | Tung-Yang Lin, Chih-Chang Cheng, Ruey-Hsin Liu | 2018-01-09 |
| 9627551 | Ultrahigh-voltage semiconductor structure and method for manufacturing the same | Tung-Yang Lin, Chih-Chang Cheng, Ruey-Hsin Liu | 2017-04-18 |
| 9431531 | Semiconductor device having drain side contact through buried oxide | Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei | 2016-08-30 |
| 9412863 | Enhanced breakdown voltages for high voltage MOSFETS | Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei | 2016-08-09 |
| 9379179 | Ultra high voltage electrostatic discharge protection device with current gain | Tung-Yang Lin, Ruey-Hsin Liu, Ming-Ta Lei | 2016-06-28 |
| 9184097 | Semiconductor devices and formation methods thereof | Han-Chung Tai | 2015-11-10 |
| 8816753 | Trim circuit for power supply controller | Rui-Hong Lu, Han-Chung Tai | 2014-08-26 |
| 8492849 | High side semiconductor structure | Han-Chung Tai | 2013-07-23 |
| 8373253 | Semiconductor structure | Han-Chung Tai | 2013-02-12 |
| 8354698 | VDMOS and JFET integrated semiconductor device | Han-Chung Tai | 2013-01-15 |