Issued Patents All Time
Showing 76–100 of 102 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9691903 | Semiconductor device and manufacturing method thereof | Chao-Hsuing Chen, Chie-Iuan Lin, Yuan-Shun Chao, Kuo-Lung Li | 2017-06-27 |
| 9653581 | Semiconductor device and method of making | Wen-Tai Lu, Chun-Feng Nieh, Yu-Chang Lin | 2017-05-16 |
| 9634104 | FinFET and method of fabricating the same | Donald Y. Chao, Shyh-Horng Yang | 2017-04-25 |
| 9607838 | Enhanced channel strain to reduce contact resistance in NMOS FET devices | Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Yong-Yan Lu | 2017-03-28 |
| 9553172 | Method and structure for FinFET devices | Yong-Yan Lu, Chia-Wei Soong | 2017-01-24 |
| 9520502 | FinFETs having epitaxial capping layer on fin and methods for forming the same | Ming-Hua Yu, Chih-Pin Tsao | 2016-12-13 |
| 9515167 | Raised epitaxial LDD in MuGFETs and methods for forming the same | Yonag-Yan Lu, Shyh-Horng Yang | 2016-12-06 |
| 9514991 | Method of manufacturing a FinFET device having a stepped profile | Chih-Wei Kuo, Yuan-Shun Chao, Shyh-Horng Yang | 2016-12-06 |
| 9431397 | Method for fabricating a multi-gate device | Chih-Wei Kuo, Yuan-Shun Chao, Shyh-Horng Yang | 2016-08-30 |
| 9425313 | Semiconductor device and manufacturing method thereof | Chao-Hsuing Chen, Chie-Iuan Lin, Yuan-Shun Chao, Kuo-Lung Li | 2016-08-23 |
| 9397157 | Multi-gate device structure including a fin-embedded isolation region and methods thereof | Chih-Wei Kuo | 2016-07-19 |
| 9252271 | Semiconductor device and method of making | Wen-Tai Lu, Yu-Chang Lin, Chun-Feng Nieh | 2016-02-02 |
| 9171925 | Multi-gate devices with replaced-channels and methods for forming the same | Chih-Wei Kuo, Yuan-Shun Chao, Shyh-Horng Yang | 2015-10-27 |
| 9166044 | Raised epitaxial LDD in MuGFETs | Wen-Tai Lu, Shyh-Horng Yang | 2015-10-20 |
| 9166053 | FinFET device including a stepped profile structure | Chih-Wei Kuo, Yuan-Shun Chao, Shyh-Horng Yang | 2015-10-20 |
| 9123564 | Semiconductor device with conformal doping and method of making | Yu-Chang Lin, Wen-Tai Lu, Li-Ting Wang, Chun-Feng Nieh, Huicheng Chang | 2015-09-01 |
| 9053934 | Finfet and method of fabricating the same | Donald Y. Chao, Shyh-Horng Yang | 2015-06-09 |
| 9000536 | Fin field effect transistor having a highly doped region | Chih-Wei Kuo, Shyh-Horng Yang | 2015-04-07 |
| 8956931 | Method for fabricating a multi-gate device | Chih-Wei Kuo, Yuan-Shun Chao, Shyh-Horng Yang | 2015-02-17 |
| 8659032 | FinFET and method of fabricating the same | Donald Y. Chao, Shyh-Horng Yang | 2014-02-25 |
| 8405168 | Nanowire fabrication method and semiconductor element using nanowire fabricated thereby | Chia-Yi Lin, Min-Cheng Chen | 2013-03-26 |
| 8048747 | Method of manufacturing embedded metal-oxide-nitride-oxide-silicon memory device | Min-Cheng Chen, Chia-Yi Lin | 2011-11-01 |
| 7943986 | Method for fabricating a body contact in a finfet structure and a device including the same | Kuo-Nan Yang, Yi Chen, Fu-Liang Yang, Chenming Hu | 2011-05-17 |
| 7244640 | Method for fabricating a body contact in a Finfet structure and a device including the same | Kuo-Nan Yang, Yi Chen, Fu-Liang Yang, Chenming Hu | 2007-07-17 |
| 7187000 | High performance tunneling-biased MOSFET and a process for its manufacture | Kuo-Nan Yang, Yi-Ling Chang, You-Lin Chu, Fu-Liang Yang, Chenming Hu | 2007-03-06 |