HC

Han-Pin Chung

TSMC: 14 patents #2,167 of 12,232Top 20%
Overall (All Time): #335,383 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
12369390 Method for forming semiconductor structure with high aspect ratio Chih-Tang Peng, Tien-I Bao 2025-07-22
11823960 Method for forming semiconductor structure with high aspect ratio Chih-Tang Peng, Tien-I Bao 2023-11-21
10872961 Semiconductor device and manufacturing method thereof 2020-12-22
10840154 Method for forming semiconductor structure with high aspect ratio Chih-Tang Peng, Tien-I Bao 2020-11-17
10629497 FinFET device structure and method for enlarging gap-fill window Jian-Shiou Huang 2020-04-21
9659776 Doping for FinFET Hung-Kai Chen, Tsung-Hung Lee, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan +3 more 2017-05-23
9362404 Doping for FinFET Hung-Kai Chen, Tsung-Hung Lee, Shih-Syuan Huang, Chun-Fu Cheng, Chien-Tai Chan +3 more 2016-06-07
9218974 Sidewall free CESL for enlarging ILD gap-fill window Bor Chiuan Hsieh, Shiang-Bau Wang, Hun-Jan Tao 2015-12-22
8999834 Sidewall-free CESL for enlarging ILD gap-fill window Bor Chiuan Hsieh, Shiang-Bau Wang, Hun-Jan Tao 2015-04-07
8900956 Method of dual EPI process for semiconductor device Bor Chiuan Hsieh, Shiang-Bau Wang, Ming-Jie Huang 2014-12-02
8900957 Method of dual epi process for semiconductor device Bor Chiuan Hsieh, Shiang-Bau Wang, Ming-Jie Huang 2014-12-02
8609497 Method of dual EPI process for semiconductor device Bor Chiuan Hsieh, Shiang-Bau Wang, Ming-Jie Huang 2013-12-17
8569185 Method of fabricating gate electrode using a treated hard mask Matt Yeh, Hui Ouyang, Shiang-Bau Wang 2013-10-29
8461015 STI structure and method of forming bottom void in same Yu-Lien Huang, Shiang-Bau Wang 2013-06-11