Issued Patents All Time
Showing 26–50 of 148 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12200940 | Three-dimensional memory device | Chung-Te Lin, Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang | 2025-01-14 |
| 12193240 | 3D ferroelectric memory | Sheng-Chen Wang, Feng-Cheng Yang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin | 2025-01-07 |
| 12193242 | Multi-level magnetic tunnel junction nor device with wrap-around gate electrodes and methods for forming the same | Bo-Feng Young, Sai-Hooi Yeong, Chenchen Jacob Wang, Meng-Han Lin, Yu-Ming Lin | 2025-01-07 |
| 12191389 | Layered structure, semiconductor device including the same, and manufacturing method thereof | Mauricio Manfrini | 2025-01-07 |
| 12165707 | Memory with FRAM and SRAM of IC | Sai-Hooi Yeong, Yu-Ming Lin | 2024-12-10 |
| 12167608 | Methods of forming three-dimensional memory devices | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2024-12-10 |
| 12150311 | Embedded ferroelectric FinFET memory device | Bo-Feng Young, Chung-Te Lin, Sai-Hooi Yeong, Yu-Ming Lin, Sheng-Chih Lai +1 more | 2024-11-19 |
| 12150308 | Semiconductor chip | Bo-Feng Young, Sai-Hooi Yeong, Yu-Ming Lin, Chih-Yu Chang | 2024-11-19 |
| 12148505 | Memory array staircase structure | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2024-11-19 |
| 12120885 | Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same | Mauricio Manfrini, Bo-Feng Young, Chun-Chieh Li, Sai-Hooi Yeong | 2024-10-15 |
| 12101939 | Three-dimensional memory device with ferroelectric material | Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin, Chi On Chui +1 more | 2024-09-24 |
| 12087621 | Air gaps in memory array structures | Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chia-Ta Yu | 2024-09-10 |
| 12089418 | Magnetoresistive stack with seed region and method of manufacturing the same | Jijun Sun, Sanjeev Aggarwal, Jon Slaughter, Renu Whig | 2024-09-10 |
| 12069961 | Magnetic tunnel junction (MTJ) element and its fabrication process | Ya-Ling Lee, Tsann Lin | 2024-08-20 |
| 12069868 | Gated ferroelectric memory cells for memory cell array and methods of forming the same | Bo-Feng Young, Sai-Hooi Yeong, Sheng-Chen Wang, Yu-Ming Lin | 2024-08-20 |
| 12069864 | Memory array and methods of forming same | Yu-Ming Lin, Bo-Feng Young, Sai-Hooi Yeong, Chi On Chui | 2024-08-20 |
| 12063787 | Three-dimensional memory device and manufacturing method thereof | Sheng-Chen Wang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin | 2024-08-13 |
| 12058869 | Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same | Bo-Feng Young, Sai-Hooi Yeong, Yu-Ming Lin, Chung-Te Lin | 2024-08-06 |
| 12058867 | Memory device | Chao-I Wu, Yu-Ming Lin, Sai-Hooi Yeong | 2024-08-06 |
| 12057471 | Ferroelectric tunnel junction devices with a sparse seed layer and methods for forming the same | Mauricio Manfrini | 2024-08-06 |
| 12041786 | Ferroelectric random access memory device with a three-dimensional ferroelectric capacitor | Bo-Feng Young, Sai-Hooi Yeong, Chi On Chui | 2024-07-16 |
| 12041783 | Ferroelectric memory device and method of forming the same | Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin | 2024-07-16 |
| 12041781 | Three-dimensional memory device with ferroelectric material | Chao-I Wu, Yu-Ming Lin | 2024-07-16 |
| 12027412 | Three-dimensional memory device and method | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Chung-Te Lin | 2024-07-02 |
| 12022659 | Three-dimensional memory device and method | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2024-06-25 |