Issued Patents All Time
Showing 151–175 of 212 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11018134 | Semiconductor device and method for manufacturing the same | Chung-Te Lin, Wei-Yuan Lu | 2021-05-25 |
| 11018224 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Sheng-Chen Wang, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su +2 more | 2021-05-25 |
| 11018245 | Epitaxial structures for fin-like field effect transistors | Chia-Ta Yu, Sheng-Chen Wang, Yen-Ming Chen, Sai-Hooi Yeong | 2021-05-25 |
| 11011634 | Elongated source/drain region structure in finFET device | Wei-Yang Lee, Ting-Yeh Chen, Chii-Horng Li | 2021-05-18 |
| 10985167 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong +1 more | 2021-04-20 |
| 10950730 | Merged source/drain features | Chun-An Lin, Wei-Yuan Lu, Tzu-Ching Lin, Li-Li Su | 2021-03-16 |
| 10923565 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Yih-Ann Lin, Yen-Ming Chen | 2021-02-16 |
| 10879395 | Method for forming semiconductor device structure with cap layer | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2020-12-29 |
| 10872889 | Semiconductor component and fabricating method thereof | Ting-Yeh Chen, Wei-Yang Lee, Han-Wei Wu | 2020-12-22 |
| 10868151 | Conformal transfer doping method for fin-like field effect transistor | Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Yen-Ming Chen | 2020-12-15 |
| 10868130 | Semiconductor device and method of manufacture | Yen-Ting Chen, Wei-Yang Lee, Yen-Ming Chen | 2020-12-15 |
| 10861753 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Kai-Hsuan Lee, Wei-Yang Lee, Yen-Ming Chen | 2020-12-08 |
| 10861749 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Wei-Yang Lee, Yen-Ming Chen | 2020-12-08 |
| 10854726 | Integrated circuit with doped low-k sidewall spacers for gate stacks | Yen-Ting Chen, Wei-Yang Lee, Yen-Ming Chen | 2020-12-01 |
| 10770354 | Method of forming integrated circuit with low-k sidewall spacers for gate stacks | Yen-Ting Chen, Wei-Yang Lee, Yen-Ming Chen | 2020-09-08 |
| 10756171 | Integrated circuit device with source/drain barrier | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2020-08-25 |
| 10748820 | Source/drain features with an etch stop layer | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2020-08-18 |
| 10714619 | PMOS FinFET | Wei-Yang Lee, Chia-Chun Lan, Chia-Ling Chan, Yen-Ming Chen | 2020-07-14 |
| 10680084 | Epitaxial structures for fin-like field effect transistors | Chia-Ta Yu, Sheng-Chen Wang, Yen-Ming Chen, Sai-Hooi Yeong | 2020-06-09 |
| 10629736 | Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy | Wei-Yang Lee, Tzu-Hsiang Hsu, Ting-Yeh Chen | 2020-04-21 |
| 10579560 | Transaction-based hybrid memory | Xiaobing Lee | 2020-03-03 |
| 10535569 | Forming transistor by selectively growing gate spacer | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Bo-Yu Lai +4 more | 2020-01-14 |
| 10529803 | Semiconductor device with epitaxial source/drain | Chia-Ta Yu, Sheng-Chen Wang, Wei-Yuan Lu, Chien-I Kuo, Li-Li Su +2 more | 2020-01-07 |
| 10529725 | Flexible merge scheme for source/drain epitaxy regions | Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong +1 more | 2020-01-07 |
| 10522680 | Finfet semiconductor device structure with capped source drain structures | Feng-Ching Chu, Wei-Yang Lee, Yen-Ming Chen | 2019-12-31 |