Issued Patents All Time
Showing 126–150 of 221 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9466678 | Semiconductor device and manufacturing method thereof | Shih-Hsien Huang, Che-Wei Chang, Tzu-I Tsai | 2016-10-11 |
| 9461041 | Metal gate finFET device | Yu-Lin Yang, Tsu-Hsiu Perng, Li-Shyue Lai | 2016-10-04 |
| 9450094 | Semiconductor process and fin-shaped field effect transistor | Kai-Lin Lee | 2016-09-20 |
| 9425102 | FinFETs with different fin heights | Tsung-Lin Lee, Chang-Yun Chang, Feng Yuan | 2016-08-23 |
| 9419134 | Strain enhancement for FinFETs | Tsung-Lin Lee, Feng Yuan, Hung-Li Chiang, Wei-Jen Lai | 2016-08-16 |
| 9397097 | Gate structure for semiconductor device | Tsung-Lin Lee, Feng Yuan, Wei-Jen Lai | 2016-07-19 |
| 9385046 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Tsung-Lin Lee | 2016-07-05 |
| 9349652 | Method of forming semiconductor device with different threshold voltages | Chia-Cheng Ho, Cheng-Yi Peng, Tsung-Lin Lee, Jung-Piao Chiu | 2016-05-24 |
| 9263342 | Semiconductor device having a strained region | Tsung-Lin Lee, Feng Yuan, Hung-Li Chiang | 2016-02-16 |
| 9257344 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Feng Yuan, Tsung-Lin Lee | 2016-02-09 |
| 9245805 | Germanium FinFETs with metal gates and stressors | Chih-Sheng Chang, Clement Hsingjen Wann | 2016-01-26 |
| 9177801 | FinFET device having a strained region | Tsung-Lin Lee, Feng Yuan, Hung-Li Chiang | 2015-11-03 |
| 9171929 | Strained structure of semiconductor device and method of making the strained structure | Tsung-Lin Lee, Feng Yuan, Cheng-Yi Peng, Clement Hsingjen Wann | 2015-10-27 |
| 9112052 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Tsung-Lin Lee | 2015-08-18 |
| 9087725 | FinFETs with different fin height and EPI height setting | Tsung-Lin Lee, Feng Yuan, Hung-Li Chiang, Wei-Jen Lai | 2015-07-21 |
| 8987824 | Multi-gate semiconductor devices | Jon-Hsu Ho, Chih-Ching Wang, Ching-Fang Huang, Wen-Hsing Hsieh, Tsung-Hsing Yu +3 more | 2015-03-24 |
| 8941153 | FinFETs with different fin heights | Tsung-Lin Lee, Chang-Yun Chang, Feng Yuan | 2015-01-27 |
| 8921218 | Metal gate finFET device and method of fabricating thereof | Yu-Lin Yang, Tsu-Hsiu Perng, Li-Shyue Lai | 2014-12-30 |
| 8896055 | Accumulation type FinFET, circuits and fabrication method thereof | Chih-Sheng Chang, Clement Hsingjen Wann | 2014-11-25 |
| 8847293 | Gate structure for semiconductor device | Tsung-Lin Lee, Feng Yuan, Wei-Jen Lai | 2014-09-30 |
| 8796759 | Fin-like field effect transistor (FinFET) device and method of manufacturing same | Tsu-Hsiu Perng, Tzu-Chiang Chen, Chia-Cheng Ho, Chih-Sheng Chang | 2014-08-05 |
| 8748993 | FinFETs with multiple fin heights | Tsung-Lin Lee, Chang-Yun Chang, Feng Yuan | 2014-06-10 |
| 8673709 | FinFETs with multiple fin heights | Tsung-Lin Lee, Chang-Yun Chang, Feng Yuan | 2014-03-18 |
| 8653609 | FinFET design with reduced current crowding | Tsung-Lin Lee | 2014-02-18 |
| 8653608 | FinFET design with reduced current crowding | Tsung-Lin Lee | 2014-02-18 |