Issued Patents All Time
Showing 26–50 of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10032889 | Self-aligned passivation of active regions | Clement Hsingjen Wann, Ling-Yen Yeh, Wei-Chun Tsai | 2018-07-24 |
| 9953975 | Methods for forming STI regions in integrated circuits | Chih-Yu Hsu, Yi-Tang Lin, Clement Hsinjen Wann, Chih-Sheng Chang, Wei-Chun Tsai +1 more | 2018-04-24 |
| 9680021 | Passivated and faceted fin field effect transistor | Yen-Yu Chen, Chi-Wen Liu | 2017-06-13 |
| 9627280 | Methods for probing semiconductor fins through four-point probe and determining carrier concentrations | Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Yuan Shao, Wei-Chun Tsai | 2017-04-18 |
| 9559182 | Self-aligned dual-metal silicide and germanide formation | Clement Hsingjen Wann, Sey-Ping Sun, Ling-Yen Yeh, Li-Chi Yu, Chun Hsiung Tsai +6 more | 2017-01-31 |
| 9553025 | Selective Fin-shaping process | Clement Hsingjen Wann, Ling-Yen Yeh, Yi-Tang Lin, Chih-Sheng Chang, Chi-Wen Liu | 2017-01-24 |
| 9530710 | Passivation structure of fin field effect transistor | Yen-Yu Chen, Ling-Yen Yeh, Clement Hsingjen Wann | 2016-12-27 |
| 9525049 | Method for fabricating fin field effect transistors | Clement Hsingjen Wann, Ling-Yen Yeh, Yi-Tang Lin, Chih-Sheng Chang | 2016-12-20 |
| 9472652 | Fin structure of semiconductor device | Yen-Yu Chen, Hung-Yao Chen, Ling-Yen Yeh, Clement Hsingjen Wann | 2016-10-18 |
| 9455325 | Fin field-effect transistors having controlled fin height | Clement Hsingjen Wann, Ling-Yen Yeh, Yuan Shao, Wen-Huei Guo, Tung Ying Lee | 2016-09-27 |
| 9431288 | System and method for test key characterizing wafer processing state | Clement Hsingjen Wann, Ling-Yen Yeh, Wei-Chun Tsai | 2016-08-30 |
| 9412847 | Self-aligned passivation of active regions | Clement Hsingjen Wann, Ling-Yen Yeh, Wei-Chun Tsai | 2016-08-09 |
| 9379108 | Contact structure of semiconductor device | Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Wen Liu, Li-Chi Yu, Meng-Chun Chang +2 more | 2016-06-28 |
| 9349659 | Methods for probing semiconductor fins and determining carrier concentrations therein | Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Yuan Shao, Wei-Chun Tsai | 2016-05-24 |
| 9337285 | Contact structure of semiconductor device | Clement Hsingjen Wann, Ling-Yen Yeh, Yen-Yu Chen | 2016-05-10 |
| 9287262 | Passivated and faceted for fin field effect transistor | Yen-Yu Chen, Chi-Wen Liu | 2016-03-15 |
| 9257343 | Method for fabricating fin field effect transistors | Clement Hsingjen Wann, Ling-Yen Yeh, Yi-Tang Lin, Chih-Sheng Chang | 2016-02-09 |
| 9214556 | Self-aligned dual-metal silicide and germanide formation | Clement Hsingjen Wann, Sey-Ping Sun, Ling-Yen Yeh, Li-Chi Yu, Chun Hsiung Tsai +6 more | 2015-12-15 |
| 9142474 | Passivation structure of fin field effect transistor | Yen-Yu Chen, Ling-Yen Yeh, Clement Hsingjen Wann | 2015-09-22 |
| 9136383 | Contact structure of semiconductor device | Clement Hsingjen Wann, Ling-Yen Yeh, Yen-Yu Chen | 2015-09-15 |
| 9093335 | Calculating carrier concentrations in semiconductor Fins using probed resistance | Clement Hsingjen Wann, Yasutoshi Okuno, Ling-Yen Yeh, Yuan Shao, Wei-Chun Tsai | 2015-07-28 |
| 9048317 | Contact structure of semiconductor device | Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Wen Liu, Li-Chi Yu, Meng-Chun Chang +2 more | 2015-06-02 |
| 9041158 | Method of forming fin field-effect transistors having controlled fin height | Clement Hsingjen Wann, Ling-Yen Yeh, Yuan Shao, Wen-Huei Guo, Tung Ying Lee | 2015-05-26 |
| 8963257 | Fin field effect transistors and methods for fabricating the same | Clement Hsingjen Wann, Ling-Yen Yeh, Yi-Tang Lin, Chih-Sheng Chang | 2015-02-24 |
| 8946829 | Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications | Clement Hsingjen Wann, Ling-Yen Yeh, Yi-Tang Lin, Chih-Sheng Chang, Chi-Wen Liu | 2015-02-03 |