Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9525054 | High electron mobility transistor and method of forming the same | Po-Chun Liu, Han-Chin Chiu, Chi-Ming Chen, Chung-Yi Yu | 2016-12-20 |
| 9478632 | Method of manufacturing a semiconductor device | Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen | 2016-10-25 |
| 9425276 | High electron mobility transistors | Po-Chun Liu, Chung-Yi Yu, Chi-Ming Chen | 2016-08-23 |
| 9368610 | High electron mobility transistor with indium nitride layer | Po-Chun Liu, Chi-Ming Chen, Min-Chang Ching, Chung-Yi Yu, Chia-Shiung Tsai +1 more | 2016-06-14 |
| 9245991 | Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing | Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen | 2016-01-26 |
| 9236464 | Method of forming a high electron mobility transistor | Chi-Ming Chen, Chung-Yi Yu, Po-Chun Liu, Han-Chin Chiu | 2016-01-12 |
| 9202875 | High electron mobility transistor with indium nitride layer | Po-Chun Liu, Chi-Ming Chen, Min-Chang Ching, Chung-Yi Yu, Chia-Shiung Tsai +1 more | 2015-12-01 |
| 9076854 | Semiconductor device | Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen | 2015-07-07 |
| 8975641 | Transistor having an ohmic contact by gradient layer and method of making the same | Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen | 2015-03-10 |
| 8969882 | Transistor having an ohmic contact by screen layer and method of making the same | Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu, Chia-Shiung Tsai, Xiaomeng Chen | 2015-03-03 |
| 8912570 | High electron mobility transistor and method of forming the same | Han-Chin Chiu, Po-Chun Liu, Chi-Ming Chen, Chung-Yi Yu | 2014-12-16 |
| 8901609 | Transistor having doped substrate and method of making the same | Chi-Ming Chen, Chih-Wen Hsiung, Ming-Chang Ching, Po-Chun Liu, Chung-Yi Yu +2 more | 2014-12-02 |
| 7981711 | Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer | Wei-I Lee, Jenn-Fang Chen | 2011-07-19 |