Issued Patents All Time
Showing 26–50 of 50 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5792592 | Photosensitive liquid precursor solutions and use thereof in making thin films | Hiroto Uchida, Nobuyuki Soyama, Kensuke Kageyama, Katsumi Ogi, Larry D. McMillan +1 more | 1998-08-11 |
| 5788757 | Composition and process using ester solvents for fabricating metal oxide films and electronic devices including the same | Hiroto Uchida, Nobuyuki Soyama, Kensuke Kageyama, Katsumi Ogi, Jeffrey W. Bacon +2 more | 1998-08-04 |
| 5759923 | Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits | Larry D. McMillan, Carlos A. Paz de Araujo, Tatsuo Otsuki, Shinichiro Hayashi | 1998-06-02 |
| 5723361 | Thin films of ABO.sub.3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same | Masamichi Azuma, Carlos A. Paz de Araujo | 1998-03-03 |
| 5699035 | ZnO thin-film varistors and method of making the same | Takeshi Ito, Shuzo Hiraide, Carlos A. Paz de Araujo, Larry D. McMillan | 1997-12-16 |
| 5690727 | Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same | Masamichi Azuma, Carlos A. Paz de Araujo | 1997-11-25 |
| 5688565 | Misted deposition method of fabricating layered superlattice materials | Larry D. McMillan, Carlos A. Paz de Araujo | 1997-11-18 |
| 5654456 | Precursors and processes for making metal oxides | Carlos A. Paz de Araujo, Larry D. McMillan | 1997-08-05 |
| 5648114 | Chemical vapor deposition process for fabricating layered superlattice materials | Carlos A. Paz de Araujo, Hitoshi Watanabe, Takashi Mihara | 1997-07-15 |
| 5624707 | Method of forming ABO.sub.3 films with excess B-site modifiers | Masamichi Azuma, Carlos A. Paz de Araujo | 1997-04-29 |
| 5620739 | Thin film capacitors on gallium arsenide substrate and process for making the same | Masamichi Azuma, Carlos A. Paz de Araujo, Toshiyuki Ueda | 1997-04-15 |
| 5614018 | Integrated circuit capacitors and process for making the same | Masamichi Azuma, Carlos A. Paz de Araujo, Joseph D. Cuchiaro | 1997-03-25 |
| 5612082 | Process for making metal oxides | Masamichi Azuma, Carlos A. Paz de Araujo, Larry D. McMillan | 1997-03-18 |
| 5601869 | Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same | Carlos A. Paz de Araujo | 1997-02-11 |
| 5559260 | Precursors and processes for making metal oxides | Carlos A. Paz de Araujo, Larry D. McMillan | 1996-09-24 |
| 5519234 | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current | Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Larry D. McMillan | 1996-05-21 |
| 5516363 | Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors | Masamichi Azuma, Bradley M. Melnick, Carlos A. Paz de Araujo | 1996-05-14 |
| 5514822 | Precursors and processes for making metal oxides | Carlos A. Paz de Araujo, Larry D. McMillan | 1996-05-07 |
| 5508226 | Low temperature process for fabricating layered superlattice materialsand making electronic devices including same | Takeshi Ito, Carlos A. Paz de Araujo, Hitoshi Watanabe | 1996-04-16 |
| 5469398 | Selectable width, brustable FIFO | David J. Browning, Michael V. Holt | 1995-11-21 |
| 5468679 | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications | Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Larry D. McMillan | 1995-11-21 |
| 5439845 | Process for fabricating layered superlattice materials and making electronic devices including same | Hitoshi Watanabe, Carlos A. Paz de Araujo, Hiroyuki Yoshimori, Takashi Mihara, Joseph D. Cuchiaro +1 more | 1995-08-08 |
| 5434102 | Process for fabricating layered superlattice materials and making electronic devices including same | Hitoshi Watanabe, Carlos A. Paz de Araujo, Hiroyuki Yoshimori, Takashi Mihara, Joseph D. Cuchiaro +1 more | 1995-07-18 |
| 5423285 | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications | Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Larry D. McMillan | 1995-06-13 |
| H481 | Microprocessor controlled RF modulator apparatus | Francis X. Filardo | 1988-06-07 |