TO

Tatsuo Otsuki

Sumitomo Electric Industries: 13 patents #1,957 of 21,551Top 10%
SY Symetrix: 10 patents #14 of 73Top 20%
PA Panasonic: 8 patents #3,315 of 21,108Top 20%
KC Kojundo Chemical Laboratory Co.: 1 patents #5 of 12Top 45%
Overall (All Time): #198,470 of 4,157,543Top 5%
22
Patents All Time

Issued Patents All Time

Showing 1–22 of 22 patents

Patent #TitleCo-InventorsDate
6924997 Ferroelectric memory and method of operating same Zheng Chen, Vikram Joshi, Myoungho Lim, Carlos A. Paz de Araujo, Larry D. McMillan +2 more 2005-08-02
6876030 Semiconductor memory device Kiyoshi Uchiyama, Yasuhiro Shimada, Koji Arita 2005-04-05
RE38565 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures Shinichiro Hayashi 2004-08-17
6653156 Ferroelectric device with capping layer and method of making same Shinichiro Hayashi, Carlos A. Paz de Araujo 2003-11-25
6541806 Ferroelectric device with capping layer and method of making same Shinichiro Hayashi, Carlos A. Paz de Araujo 2003-04-01
6469334 Ferroelectric field effect transistor Koji Arita, Shinichiro Hayashi, Carlos A. Paz de Araujo 2002-10-22
6447838 Integrated circuit capacitors with barrier layer and process for making the same Masamichi Azuma, Eiji Fujii, Yasuhiro Uemoto, Shinichiro Hayashi, Toru Nasu +5 more 2002-09-10
6440754 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures Shinichiro Hayashi 2002-08-27
6333528 Semiconductor device having a capacitor exhibiting improved moisture resistance Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 2001-12-25
6294438 Semiconductor device having capacitor and manufacturing method thereof Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 2001-09-25
6265738 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures Shinichiro Hayashi 2001-07-24
6255121 Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor Koji Arita, Shinichiro Hayashi, Carlos A. Paz de Araujo 2001-07-03
6169304 Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 2001-01-02
6151241 Ferroelectric memory with disturb protection Shinichiro Hayashi, Carlos A. Paz de Araujo 2000-11-21
6107657 Semiconductor device having capacitor and manufacturing method thereof Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 2000-08-22
6104049 Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same Narayan Solayappan, Vikram Joshi, Carlos A. Paz de Araujo, Larry D. McMillan, Shinichiro Hayashi 2000-08-15
6015987 Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 2000-01-18
5932281 Method of manufacturing bi-layered ferroelectric thin film Yukoh Hochido, deceased, Hidekimi Kadokura, Masamichi Matsumoto, Koji Arita, Masamichi Azuma 1999-08-03
5780351 Semiconductor device having capacitor and manufacturing method thereof Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 1998-07-14
5759923 Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits Larry D. McMillan, Michael C. Scott, Carlos A. Paz de Araujo, Shinichiro Hayashi 1998-06-02
5624864 Semiconductor device having capacitor and manufacturing method thereof Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu +4 more 1997-04-29
4712023 Buffered FET logic gate using depletion-mode MESFET's. Akio Shimano, Hiromitsu Aoki, Ikuko Aoki 1987-12-08