Issued Patents All Time
Showing 151–175 of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5759923 | Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits | Larry D. McMillan, Michael C. Scott, Tatsuo Otsuki, Shinichiro Hayashi | 1998-06-02 |
| 5751034 | High dielectric constant barium-strontium-niobium oxides for integrated circuit applications | Joseph D. Cuchiaro, Vikram Joshi, Claudia P. DaCruz, John M. McNelis | 1998-05-12 |
| 5723171 | Integrated circuit electrode structure and process for fabricating same | Joseph D. Cuchiaro, Larry D. McMillan | 1998-03-03 |
| 5723361 | Thin films of ABO.sub.3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same | Masamichi Azuma, Michael C. Scott | 1998-03-03 |
| 5719416 | Integrated circuit with layered superlattice material compound | Hiroyuki Yoshimori, Hitoshi Watanabe, Shuzo Hiraide, Takashi Mihara, Larry D. McMillan | 1998-02-17 |
| 5708302 | Bottom electrode structure for dielectric capacitors | Masamichi Azuma, Joseph D. Cuchiaro | 1998-01-13 |
| 5699035 | ZnO thin-film varistors and method of making the same | Takeshi Ito, Shuzo Hiraide, Michael C. Scott, Larry D. McMillan | 1997-12-16 |
| 5690727 | Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same | Masamichi Azuma, Michael C. Scott | 1997-11-25 |
| 5688565 | Misted deposition method of fabricating layered superlattice materials | Larry D. McMillan, Michael C. Scott | 1997-11-18 |
| 5654456 | Precursors and processes for making metal oxides | Michael C. Scott, Larry D. McMillan | 1997-08-05 |
| 5648114 | Chemical vapor deposition process for fabricating layered superlattice materials | Hitoshi Watanabe, Michael C. Scott, Takashi Mihara | 1997-07-15 |
| 5624707 | Method of forming ABO.sub.3 films with excess B-site modifiers | Masamichi Azuma, Michael C. Scott | 1997-04-29 |
| 5620739 | Thin film capacitors on gallium arsenide substrate and process for making the same | Masamichi Azuma, Michael C. Scott, Toshiyuki Ueda | 1997-04-15 |
| 5614018 | Integrated circuit capacitors and process for making the same | Masamichi Azuma, Michael C. Scott, Joseph D. Cuchiaro | 1997-03-25 |
| 5614252 | Method of fabricating barium strontium titanate | Larry D. McMillan | 1997-03-25 |
| 5612082 | Process for making metal oxides | Masamichi Azuma, Michael C. Scott, Larry D. McMillan | 1997-03-18 |
| 5601869 | Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same | Michael C. Scott | 1997-02-11 |
| 5559733 | Memory with ferroelectric capacitor connectable to transistor gate | Larry D. McMillan, Takashi Mihara, Hiroyuki Yoshimori, John Gregory | 1996-09-24 |
| 5559260 | Precursors and processes for making metal oxides | Michael C. Scott, Larry D. McMillan | 1996-09-24 |
| 5540772 | Misted deposition apparatus for fabricating an integrated circuit | Larry D. McMillan, Tommy L. Roberts | 1996-07-30 |
| 5541870 | Ferroelectric memory and non-volatile memory cell for same | Takashi Mihara, Hitoshi Watanabe, Hiroyuki Yoshimori, Larry D. McMillan | 1996-07-30 |
| 5523964 | Ferroelectric non-volatile memory unit | Larry D. McMillan, Takashi Mihara, Hiroyuki Yoshimori, John Gregory | 1996-06-04 |
| 5519234 | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current | Joseph D. Cuchiaro, Michael C. Scott, Larry D. McMillan | 1996-05-21 |
| 5516363 | Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors | Masamichi Azuma, Bradley M. Melnick, Michael C. Scott | 1996-05-14 |
| 5514822 | Precursors and processes for making metal oxides | Michael C. Scott, Larry D. McMillan | 1996-05-07 |