Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5989992 | Method of making a semiconductor device | Toshiki Yabu | 1999-11-23 |
| 5972783 | Method for fabricating a semiconductor device having a nitrogen diffusion layer | Masatoshi Arai, Toshiki Yabu | 1999-10-26 |
| 5960300 | Method of manufacturing semiconductor device | Toshiki Yabu, Takashi Uehara, Takashi Nakabayashi | 1999-09-28 |
| 5946563 | Semiconductor device and method of manufacturing the same | Takashi Uehara, Toshiki Yabu, Takashi Nakabayashi, Minoru Fujii | 1999-08-31 |
| 5879983 | Semiconductor device and method for manufacturing the same | Toshiki Yabu, Takashi Uehara, Takashi Nakabayashi, Kyoji Yamashita, Takaaki Ukeda +2 more | 1999-03-09 |
| 5756382 | Manufacturing method of CMOS transistor | Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda +4 more | 1998-05-26 |
| 5736421 | Semiconductor device and associated fabrication method | Hiroshi Shimomura, Kiyoyuki Morita, Takashi Nakabayashi, Takashi Uehara, Mitsuo Yasuhira +1 more | 1998-04-07 |
| 5726071 | Manufacturing method of CMOS transistor | Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda +4 more | 1998-03-10 |
| 5698902 | Semiconductor device having finely configured gate electrodes | Takashi Uehara, Toshiki Yabu, Takashi Nakabayashi, Minoru Fujii | 1997-12-16 |
| 5686340 | Manufacturing method of CMOS transistor | Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda +4 more | 1997-11-11 |
| 5677249 | Semiconductor apparatus and production method for the same | Masahiro Fukui, Toshiro Akino, Michikazu Matsumoto | 1997-10-14 |
| 5618748 | Manufacturing method of CMOS transistor with no reduction of punch-through voltage | Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda +4 more | 1997-04-08 |
| 5447872 | Manufacturing method of CMOS transistor including heat treatments of gate electrodes and LDD regions at reducing temperatures | Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda +4 more | 1995-09-05 |
| 5428244 | Semiconductor device having a silicon rich dielectric layer | Yoshiaki Kato, Hiroaki Nakaoka | 1995-06-27 |
| 5409847 | Manufacturing method of CMOS transistor in which heat treatment at higher temperature is done prior to heat treatment at low temperature | Yoshiaki Kato, Hiroaki Nakaoka, Takashi Nakabayashi, Atsushi Hori, Hiroshi Masuda +4 more | 1995-04-25 |
| 5320974 | Method for making semiconductor transistor device by implanting punch through stoppers | Atsushi Hori, Hiroshi Shimomura, Shuichi Kameyama | 1994-06-14 |
| 5296388 | Fabrication method for semiconductor devices | Shuichi Kameyama, Atsushi Hori, Hiroshi Shimomura | 1994-03-22 |
| 5254485 | Method for manufacturing bipolar semiconductor device | Shuichi Kameyama, Hiroshi Shimomura, Atsushi Hori | 1993-10-19 |
| 5202277 | Method of fabricating a semiconductor device | Shuichi Kameyama, Atsushi Hori, Hiroshi Shimomura | 1993-04-13 |
| 5158903 | Method for producing a field-effect type semiconductor device | Atsushi Hori, Shuichi Kameyama, Hiroshi Shimomura | 1992-10-27 |
| 5045493 | Semiconductor device and method of manufacturing the same | Shuichi Kameyama, Kazuya Kikuchi, Hiroshi Shimomura | 1991-09-03 |