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Home › Stmicroelectronics Sa › Ferdinando IUCOLANO

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Ferdinando IUCOLANO — 31 Patents

SSStmicroelectronics Sa: 30 patents #119 of 4,662Top 3%

Gravina di Catania, IT: #2 of 39 inventorsTop 6%

Overall (All Time): #115,823 of 4,157,543Top 3%

31 Patents All Time

Ferdinando IUCOLANO has been granted 31 US patents while listed as an inventor at Stmicroelectronics Sa. The first was granted in 2018 and the most recent in October 2025. Ferdinando IUCOLANO ranks #115,823 of 4,157,543 US inventors in our database (top 2.8%). Patent records list Ferdinando IUCOLANO in Gravina di Catania, IT.

Patents per Year

Issued Patents All Time

Showing 1–25 of 31 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12457765	Normally-off transistor with reduced on-state resistance and manufacturing method	Alfonso Patti	2025-10-28
12278283	HEMT transistor including an improved gate region and related manufacturing process	Cristina TRINGALI	2025-04-15
12218231	HEMT transistor including field plate regions and manufacturing process thereof	Alessandro Chini	2025-02-04
12165871	Method for manufacturing a gate terminal of a HEMT device, and HEMT device	Cristina TRINGALI	2024-12-10	$11,055,000
12154967	Method for manufacturing an ohmic contact for a HEMT device	Cristina TRINGALI	2024-11-26	$22,566,000
12148823	Double-channel HEMT device and manufacturing method thereof	Alessandro Chini	2024-11-19	$12,081,000
12062715	HEMT transistor with adjusted gate-source distance, and manufacturing method thereof	—	2024-08-13	$33,407,000
11862707	HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method	Alfonso Patti, Alessandro Chini	2024-01-02	$20,073,000
11854977	GAN-based, lateral-conduction, electronic device with improved metallic layers layout	Santo Alessandro Smerzi, Maria Concetta Nicotra	2023-12-26	$15,895,000
11799025	HEMT transistor including an improved gate region and related manufacturing process	Cristina TRINGALI	2023-10-24	$20,570,000
11728404	Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device	Paolo BADALÁ	2023-08-15	$30,975,000
11699748	Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof	Giuseppe Greco, Fabrizio ROCCAFORTE	2023-07-11	$27,729,000
11538922	Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor	—	2022-12-27	$15,618,000
11489068	Double-channel HEMT device and manufacturing method thereof	Alessandro Chini	2022-11-01	$16,962,000
11316038	HEMT transistor with adjusted gate-source distance, and manufacturing method thereof	—	2022-04-26	$26,166,000
11222969	Normally-off transistor with reduced on-state resistance and manufacturing method	Alfonso Patti	2022-01-11	$47,936,000
11101363	HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method	Alfonso Patti, Alessandro Chini	2021-08-24	$34,477,000
11043574	Method of manufacturing a HEMT device with reduced gate leakage current, and HEMT device	Paolo BADALA'	2021-06-22	$53,464,000
11038047	Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof	Giuseppe Greco, Fabrizio ROCCAFORTE	2021-06-15	$21,266,000
10896969	Manufacturing method of an HEMT transistor of the normally off type with reduced resistance in the on state and HEMT transistor	—	2021-01-19	$34,803,000
10892357	Double-channel HEMT device and manufacturing method thereof	Alessandro Chini	2021-01-12	$26,721,000
10651304	High-power and high-frequency heterostructure field-effect transistor	—	2020-05-12	$14,602,000
10566450	Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof	Giuseppe Greco, Fabrizio ROCCAFORTE	2020-02-18	$35,908,000
10522646	HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method	Alfonso Patti, Alessandro Chini	2019-12-31	$13,265,000
10516041	HEMT transistor with high stress resilience during off state and manufacturing method thereof	Alessandro Chini	2019-12-24	$51,545,000