Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

US Patent 10522646 · Granted Dec 31, 2019

Estimated economic value: $13,265,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Normally-off transistor with reduced on-state resistance and manufacturing metho2025
Normally-off transistor with reduced on-state resistance and manufacturing metho2025
HEMT transistor including an improved gate region and related manufacturing proc2025
HEMT transistor including field plate regions and manufacturing process thereof2025
HEMT transistor including field plate regions and manufacturing process thereof2025
Method for manufacturing a gate terminal of a HEMT device, and HEMT device2024
Method for manufacturing an ohmic contact for a HEMT device2024
Double-channel HEMT device and manufacturing method thereof2024
Double-channel HEMT device and manufacturing method thereof2024
HEMT transistor with adjusted gate-source distance, and manufacturing method the2024
HEMT transistor of the normally off type including a trench containing a gate re2024
HEMT transistor of the normally off type including a trench containing a gate re2024