Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › GAN-based, lateral-conduction, electronic device with improved metallic layers layout

GAN-based, lateral-conduction, electronic device with improved metallic layers layout

US Patent 11854977 · Granted Dec 26, 2023

Estimated economic value: $15,895,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Normally-off transistor with reduced on-state resistance and manufacturing metho2025
HEMT transistor including an improved gate region and related manufacturing proc2025
HEMT transistor including field plate regions and manufacturing process thereof2025
Method for manufacturing a gate terminal of a HEMT device, and HEMT device2024
Method for manufacturing an ohmic contact for a HEMT device2024
Double-channel HEMT device and manufacturing method thereof2024
HEMT transistor with adjusted gate-source distance, and manufacturing method the2024
Stress sensor, structural health monitoring system for constructions and process2024
HEMT transistor of the normally off type including a trench containing a gate re2024
Process for manufacturing a strained semiconductor device and corresponding stra2023
HEMT transistor including an improved gate region and related manufacturing proc2023
Method of manufacturing a HEMT device with reduced gate leakage current, and HEM2023