| 8896048 |
Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors |
Richard Fastow, Zhigang Wang, Yue-Song He, Kazuhiro Mizutani |
2014-11-25 |
| 7851306 |
Method for forming a flash memory device with straight word lines |
Shenqing Fang, Hiroyuki Ogawa, Kuo-Tung Chang, Kazuhiro Mizutani, Zhigang Wang |
2010-12-14 |
| 7488657 |
Method and system for forming straight word lines in a flash memory array |
Shenqing Fang, Hiroyuki Ogawa, Kuo-Tung Chang, Kazuhiro Mizutani, Zhigang Wang |
2009-02-10 |
| 7170130 |
Memory cell with reduced DIBL and Vss resistance |
Shenqing Fang, Kuo-Tung Chang, Zhigang Wang |
2007-01-30 |
| 7151028 |
Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss resistance and increased reliability |
Shenqing Fang, Rinji Sugino, Kuo-Tung Chang, Zhigang Wang, Kazuhiro Mizutani |
2006-12-19 |
| 7029975 |
Method and apparatus for eliminating word line bending by source side implantation |
Shenqing Fang, Kuo-Tung Chang, Kazuhiro Mizutani |
2006-04-18 |