DE

David R. Evans

SA Sharp Laboratories Of America: 99 patents #5 of 419Top 2%
Sharp Kabushiki Kaisha: 9 patents #1,853 of 10,731Top 20%
ST Sharp Microelectronics Technology: 3 patents #8 of 57Top 15%
Tektronix: 1 patents #823 of 1,698Top 50%
XL Xenogenic Development Limited Liability: 1 patents #12 of 28Top 45%
📍 Beaverton, OR: #25 of 3,140 inventorsTop 1%
🗺 Oregon: #199 of 28,073 inventorsTop 1%
Overall (All Time): #13,510 of 4,157,543Top 1%
104
Patents All Time

Issued Patents All Time

Showing 26–50 of 104 patents

Patent #TitleCo-InventorsDate
7446010 Metal/semiconductor/metal (MSM) back-to-back Schottky diode Tingkai Li, Sheng Teng Hsu 2008-11-04
7446014 Nanoelectrochemical cell Fengyan Zhang, Sheng Teng Hsu 2008-11-04
7407858 Resistance random access memory devices and method of fabrication Tingkai Li, Sheng Teng Hsu 2008-08-05
7405098 Smooth surface liquid phase epitaxial germanium Jong-Jan Lee, Jer-Shen Maa, Douglas J. Tweet, Allen Burmaster 2008-07-29
7390725 Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet, Allen Burmaster, Sheng Teng Hsu 2008-06-24
7364665 Selective etching processes of SiO2 , Ti and In2 O3 thin films for FeRAM device applications Tingkai Li, Bruce D. Ulrich, Sheng Teng Hsu 2008-04-29
7364989 Strain control of epitaxial oxide films using virtual substrates Douglas J. Tweet, Yoshi Ono, Sheng Teng Hsu 2008-04-29
7361574 Single-crystal silicon-on-glass from film transfer Jer-Shen Maa, Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu 2008-04-22
7306962 Electroformed metallization John W. Hartzell 2007-12-11
7271081 Metal/ZnOx/metal current limiter Tingkai Li, Sheng Teng Hsu, Wei-Wei Zhuang 2007-09-18
7267996 Iridium etching for FeRAM applications Fengyan Zhang, Wei Pan, Lisa Stecker, Jer-Shen Maa 2007-09-11
7256429 Memory cell with buffered-layer Sheng Teng Hsu, Tingkai Li, Fengyan Zhang, Wei Pan, Wei-Wei Zhuang +1 more 2007-08-14
7241670 Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen Douglas J. Tweet, Sheng Teng Hsu, Jer-Shen Maa 2007-07-10
7235407 System and method for forming a bipolar switching PCMO film Tingkai Li, Lawrence J. Charneski, Wei-Wei Zhuang, Sheng Teng Hsu 2007-06-26
7214583 Memory cell with an asymmetric crystalline structure Sheng Teng Hsu, Tingkai Li, Wei-Wei Zhuang, Wei Pan 2007-05-08
7205238 Chemical mechanical polish of PCMO thin films for RRAM applications Wei Pan, Allen Burmaster 2007-04-17
7192866 Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects Wei Pan, Sheng Teng Hsu 2007-03-20
7160819 Method to perform selective atomic layer deposition of zinc oxide John F. Conley, Jr., Yoshi Ono 2007-01-09
7157287 Method of substrate surface treatment for RRAM thin film deposition Wei-Wei Zhuang, Tingkai Li, Wei Pan, Sheng Teng Hsu 2007-01-02
7094691 MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications Wei Pan, Robert Barrowcliff, Sheng Teng Hsu 2006-08-22
7060586 PCMO thin film with resistance random access memory (RRAM) characteristics Tingkai Li, Wei-Wei Zhuang, Sheng Teng Hsu 2006-06-13
7029982 Method of affecting RRAM characteristics by doping PCMO thin films Wei-Wei Zhuang, Fengyan Zhang, Sheng Teng Hsu 2006-04-18
7029944 Methods of forming a microlens array over a substrate employing a CMP stop John F. Conley, Jr., Yoshi Ono, Wei Gao 2006-04-18
7029924 Buffered-layer memory cell Sheng Teng Hsu, Tingkai Li, Fengyan Zhang, Wei Pan, Wei-Wei Zhuang +1 more 2006-04-18
7016094 Nonvolatile solid state electro-optic modulator Nobuyoshi Awaya 2006-03-21