SK

Shigeki Komori

SL Semiconductor Energy Laboratory: 60 patents #164 of 1,113Top 15%
Mitsubishi Electric: 30 patents #466 of 25,717Top 2%
RT Renesas Technology: 4 patents #758 of 3,337Top 25%
NC Nippon Kokan Co.: 3 patents #85 of 735Top 15%
NC Nippon Petrochemicals, Co.: 2 patents #116 of 359Top 35%
Overall (All Time): #14,760 of 4,157,543Top 1%
99
Patents All Time

Issued Patents All Time

Showing 76–99 of 99 patents

Patent #TitleCo-InventorsDate
5598019 Semiconductor device having trench isolation structure and method of manufacturing the same Takehisa Yamaguchi 1997-01-28
5536665 Method of manufacturing a semiconductor device with double structured well Takashi Kuroi, Masahide Inuishi 1996-07-16
5478761 Method of producing semiconductor device having first and second type field effect transistors Katsuhiro Tsukamoto 1995-12-26
5473016 Matte film or sheet and method for preparing same Koichi Fujii, Koichi Komaki, Minoru Tajima 1995-12-05
5457339 Semiconductor device for element isolation and manufacturing method thereof Katsuhiro Tsukamoto 1995-10-10
5455437 Semiconductor device having crystalline defect isolation regions Takashi Kuroi 1995-10-03
5448093 Micro MIS type FET and manufacturing process therefor Shigeru Kusunoki, Katsuhiro Tsukamoto 1995-09-05
5446305 Semiconductor device with double structured well Takashi Kuroi, Masahide Inuishi 1995-08-29
5412237 Semiconductor device with improved element isolation and operation rate Katsuhiro Tsukamoto 1995-05-02
5401671 Method of manufacturing a semiconductor device Katsuhiro Tsukamoto 1995-03-28
5330923 Manufacturing process for a micro MIS type FET Shigeru Kusunoki, Katsuhiro Tsukamoto 1994-07-19
5296401 MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof Katsuyoshi Mitsui 1994-03-22
5293060 Semiconductor device with diffusion well isolation Katsuhiro Tsukamoto 1994-03-08
5208473 Lightly doped MISFET with reduced latchup and punchthrough Shigeru Kusunoki, Katsuhiro Tsukamoto 1993-05-04
5196908 Micro MIS type FET and manufacturing process therefor Shigeru Kusunoki, Katsuhiro Tsukamoto 1993-03-23
5141882 Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor Katsuhiro Tsukamoto 1992-08-25
5138420 Semiconductor device having first and second type field effect transistors separated by a barrier Katsuhiro Tsukamoto 1992-08-11
5045901 Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions Katsuhiro Tsukamoto 1991-09-03
5019520 Method for preparing a high mobility, lightly-doped channel mis-type FET with reduced latch up and punchthrough Shigeru Kusunoki, Katsuhiro Tsukamoto 1991-05-28
4978629 Method of making a metal-oxide-semiconductor device having shallow source and drain diffused regions Katsuhiro Tsukamoto 1990-12-18
4793956 Process for preparing porous film or sheet Motomi Nogiwa, Shuichi Yoshida, Toshitsune Yoshikawa, Toshio Koutsuka 1988-12-27
4770229 Horizontal type continuous casting machine for casting molten steel into cast steel strand Masahiro Tsuru 1988-09-13
4660618 Flow stop control method and apparatus for casting withdrawal control of horizontal continuous casting machine Kazuo Mitani, Yoshiharu Hirota, Shinobu Kumagai, Masahiro Tsuru 1987-04-28
4522540 Method and apparatus for removing cutting burr sticking to lower surface of slab Nobuhisa Hasebe, Hiroshi Kawada, Naoki Yokoyama 1985-06-11