Issued Patents All Time
Showing 1–25 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12057511 | Light-emitting device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2024-08-06 |
| 11997859 | Light-emitting device and manufacturing method thereof | Shingo Eguchi, Yoshiaki Oikawa, Kenichi OKAZAKI | 2024-05-28 |
| 11626521 | Light-emitting device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2023-04-11 |
| 11469387 | Light-emitting device and manufacturing method thereof | Shingo Eguchi, Yoshiaki Oikawa, Kenichi OKAZAKI | 2022-10-11 |
| 11171298 | Light-emitting device and manufacturing method thereof | Shingo Eguchi, Yoshiaki Oikawa, Kenichi OKAZAKI | 2021-11-09 |
| 11024747 | Light-emitting device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2021-06-01 |
| 10720328 | Etching method and etching apparatus | Katsunori Tanaka | 2020-07-21 |
| 10672915 | Light-emitting device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2020-06-02 |
| 10374184 | Light-emitting device and manufacturing method thereof | Shingo Eguchi, Yoshiaki Oikawa, Kenichi OKAZAKI | 2019-08-06 |
| 10297679 | Method for manufacturing semiconductor device | Yoshiaki Oikawa, Kenichi OKAZAKI | 2019-05-21 |
| 10243005 | Semiconductor device and manufacturing method thereof | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2019-03-26 |
| 9887276 | Method for manufacturing semiconductor device having oxide semiconductor | Yoshiaki Oikawa, Kenichi OKAZAKI | 2018-02-06 |
| 9865471 | Etching method and etching apparatus | Gaku Shimoda, Takanori Sato, Masafumi Urakawa, Masahiro Ogasawara | 2018-01-09 |
| 9837442 | Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI +1 more | 2017-12-05 |
| 9666820 | Light-emitting device and manufacturing method thereof | Shingo Eguchi, Yoshiaki Oikawa, Kenichi OKAZAKI | 2017-05-30 |
| 9583509 | Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI +1 more | 2017-02-28 |
| 9537012 | Semiconductor device with oxide semiconductor layer | Shunpei Yamazaki, Junichiro Sakata, Kosei Noda, Masayuki Sakakura, Yoshiaki Oikawa | 2017-01-03 |
| 9466756 | Semiconductor device and manufacturing method thereof | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2016-10-11 |
| 9431427 | Semiconductor device comprising oxide semiconductor layer | Yoshiaki Oikawa, Hiromichi Godo, Daisuke Kawae, Shunpei Yamazaki | 2016-08-30 |
| 9431465 | Light-emitting device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2016-08-30 |
| 9391095 | Semiconductor device and manufacturing method thereof | Shunpei Yamazaki, Yoshiaki Oikawa, Katsuaki TOCHIBAYASHI | 2016-07-12 |
| 9153602 | Semiconductor device wherein an oxide semiconductor layer comprises a crystal and has a degree of crystallization of 80% or more | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI +1 more | 2015-10-06 |
| 9130041 | Semiconductor device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Kosei Noda, Masayuki Sakakura, Yoshiaki Oikawa | 2015-09-08 |
| 8957411 | Light-emitting device and method for manufacturing the same | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI | 2015-02-17 |
| 8885115 | Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating layer | Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi OKAZAKI +1 more | 2014-11-11 |