Issued Patents All Time
Showing 51–75 of 144 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8482967 | Magnetic memory element with multi-domain storage layer | Haiwen Xi, Yuankai Zheng, Xiaobin Wang, Pat J. Ryan | 2013-07-09 |
| 8482883 | Magnetic sensor with perpendicular anisotrophy free layer and side shields | Zheng Gao, Wonjoon Jung, Paul E. Anderson, Olle Gunnar Heinonen | 2013-07-09 |
| 8467154 | Magnetic sensors having perpendicular anisotropy free layer | Mark William Covington, Wonjoon Jung, Dion Song | 2013-06-18 |
| 8462543 | Thermally assisted multi-bit MRAM | Yuankai Zheng, Haiwen Xi | 2013-06-11 |
| 8456903 | Magnetic memory with porous non-conductive current confinement layer | Michael Xuefei Tang, Ming Sun, Patrick J. Ryan | 2013-06-04 |
| 8422279 | STRAM with composite free magnetic element | Yuankai Zheng, Dexin Wang, Haiwen Xi, Kaizhong Gao, Olle Gunnar Heinonen +1 more | 2013-04-16 |
| 8416619 | Magnetic memory with phonon glass electron crystal material | Yuankai Zheng, Haiwen Xi, Dexin Wang | 2013-04-09 |
| 8416614 | Spin-transfer torque memory non-destructive self-reference read method | Yiran Chen, Hai Li, Hongyue Liu, Ran Wang | 2013-04-09 |
| 8411495 | Spin-transfer torque memory self-reference read method | Hai Li, Yiran Chen, Hongyue Liu, Kang-Yong Kim, Henry Huang | 2013-04-02 |
| 8400867 | Non-volatile memory with stray magnetic field compensation | Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi | 2013-03-19 |
| 8400825 | Magnetic field assisted stram cells | Xiaobin Wang, Haiwen Xi, Hongyue Liu, Insik Jin, Andreas Roelofs +1 more | 2013-03-19 |
| 8395867 | Magnetic sensor with a recessed reference layer assembly and a front shield | Zheng Gao, Wonjoon Jung, Sharat Batra, Olle Gunnar Heinonen | 2013-03-12 |
| 8390963 | Trilayer reader with current constraint at the ABS | Dian Song, Thu Nguyen, Carolyn Pitcher Van Dorn | 2013-03-05 |
| 8362534 | Flux-closed STRAM with electronically reflective insulative spacer | Yuankai Zheng | 2013-01-29 |
| 8335058 | Magnetic sensor including a free layer having perpendicular to the plane anisotropy | Song S. Xue, Zheng Gao, Shaoping Li, Kaizhong Gao, Konstantin Nikolaev +1 more | 2012-12-18 |
| 8309945 | Programmable metallization memory cell with planarized silver electrode | Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan +2 more | 2012-11-13 |
| 8295072 | Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures | Olle Gunnar Heinonen, Yiran Chen, Haiwen Xi, Xiaohua Lou | 2012-10-23 |
| 8289759 | Non-volatile memory cell with precessional switching | Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen +3 more | 2012-10-16 |
| 8288254 | Programmable metallization memory cell with planarized silver electrode | Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan +2 more | 2012-10-16 |
| 8289660 | Auxiliary magnetoresistive shield | Dion Song | 2012-10-16 |
| 8289756 | Non volatile memory including stabilizing structures | Yuankai Zheng, Dexin Wang, Haiwen Xi, Xiaobin Wang, Wei Tian +1 more | 2012-10-16 |
| 8289758 | Magnetic tunnel junction with electronically reflective insulative spacer | Yuankai Zheng, Wei Tian, Dexin Wang, Zheng Gao, Xiaobin Wang | 2012-10-16 |
| 8279662 | Multi-bit magnetic memory with independently programmable free layer domains | Xiaohua Lou, Zheng Gao | 2012-10-02 |
| 8223532 | Magnetic field assisted STRAM cells | Xiaobin Wang, Haiwen Xi, Hongyue Liu, Insik Jin, Andreas Roelofs +1 more | 2012-07-17 |
| 8218356 | Spin-torque memory with unidirectional write scheme | Haiwen Xi, Dexin Wang, Paul E. Anderson, Song S. Xue | 2012-07-10 |