Issued Patents All Time
Showing 101–125 of 144 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8023316 | Magnetic tunnel junction with compensation element | Yuankai Zheng, Dexin Wang, Wei Tian, Xiaobin Wang, Xiaohua Lou | 2011-09-20 |
| 8004883 | Thermally assisted multi-bit MRAM | Yuankai Zheng, Haiwen Xi | 2011-08-23 |
| 7999336 | ST-RAM magnetic element configurations to reduce switching current | Dexin Wang, Song S. Xue, Insik Jin | 2011-08-16 |
| 7998758 | Method of fabricating a magnetic stack design with decreased substrate stress | Yongchul Ahn, Shuiyuan Haung, Antoine Khoueir, Paul E. Anderson, Lili Jia +2 more | 2011-08-16 |
| 7985994 | Flux-closed STRAM with electronically reflective insulative spacer | Yuankai Zheng | 2011-07-26 |
| 7977722 | Non-volatile memory with programmable capacitance | Xuguang Wang, Shuiyuan Huang, Michael Xuefei Tang, Song S. Xue | 2011-07-12 |
| 7961509 | Spin-transfer torque memory self-reference read and write assist methods | Wenzhong Zhu, Yiran Chen, Xiaobin Wang, Zheng Gao, Haiwen Xi | 2011-06-14 |
| 7952917 | Variable write and read methods for resistive random access memory | Haiwen Xi, Hongyue Liu, Xiaobin Wang, Yong Lu, Yiran Chen +3 more | 2011-05-31 |
| 7944742 | Diode assisted switching spin-transfer torque memory unit | Xuguang Wang, Yiran Chen, Hongyue Liu, Xiaobin Wang | 2011-05-17 |
| 7940592 | Spin-torque bit cell with unpinned reference layer and unidirectional write current | Daniel S. Reed, Yon Lu, Song S. Xue, Paul E. Anderson | 2011-05-10 |
| 7940600 | Non-volatile memory with stray magnetic field compensation | Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi | 2011-05-10 |
| 7940551 | STRAM with electronically reflective insulative spacer | Yuankai Zheng, Wei Tian, Dexin Wang, Zheng Gao, Xiaobin Wang | 2011-05-10 |
| 7936592 | Non-volatile memory cell with precessional switching | Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen +3 more | 2011-05-03 |
| 7933146 | Electronic devices utilizing spin torque transfer to flip magnetic orientation | Olle Gunnar Heinonen, Yiran Chen, Haiwen Xi, Xiaohua Lou | 2011-04-26 |
| 7933137 | Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures | Olle Gunnar Heinonen, Yiran Chen, Haiwen Xi, Xiaohua Lou | 2011-04-26 |
| 7929258 | Magnetic sensor including a free layer having perpendicular to the plane anisotropy | Song S. Xue, Zheng Gao, Shaoping Li, Kaizhong Gao, Konstantin Nikolaev +1 more | 2011-04-19 |
| 7916528 | Predictive thermal preconditioning and timing control for non-volatile memory cells | Yiran Chen, Hai Li, Harry Hongyue Liu, Alan Xuguang Wang, Xiaobin Wang | 2011-03-29 |
| 7894250 | Stuck-at defect condition repair for a non-volatile memory cell | Alan Xuguang Wang, Xiaobin Wang, Hai Li, Haiwen Xi, Harry Hongyue Liu | 2011-02-22 |
| 7881104 | Magnetic memory with separate read and write paths | Yong Lu, Hongyue Liu, Zheng Gao, Insik Jin | 2011-02-01 |
| 7880209 | MRAM cells including coupled free ferromagnetic layers for stabilization | Haiwen Xi, Kaizhong Gao, Song S. Xue | 2011-02-01 |
| 7876604 | Stram with self-reference read scheme | Yuankai Zheng, Yiran Chen, Xiaobin Wang, Zheng Gao, Wenzhong Zhu +1 more | 2011-01-25 |
| 7876595 | Magnetic shift register as counter and data storage device | Haiwen Xi, Andreas Roelofs, Xiaobin Wang, Paul E. Anderson, Hongyue Liu | 2011-01-25 |
| 7875923 | Band engineered high-K tunnel oxides for non-volatile memory | Wei Tian, Insik Jin, Song S. Xue | 2011-01-25 |
| 7855911 | Reconfigurable magnetic logic device using spin torque | Xiaohua Lou, Song S. Xue | 2010-12-21 |
| 7834385 | Multi-bit STRAM memory cells | Zheng Gao, Xiaobin Wang | 2010-11-16 |