Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10164121 | Stacked independently contacted field effect transistor having electrically separated first and second gates | Borna J. Obradovic, Joon Goo Hong, Rwik Sengupta | 2018-12-25 |
| 10153368 | Unipolar complementary logic | Rwik Sengupta, Chris Bowen | 2018-12-11 |
| 10147793 | FinFET devices including recessed source/drain regions having optimized depths | Borna J. Obradovic, Mark S. Rodder, Jorge A. Kittl, Robert C. Bowen | 2018-12-04 |
| 10026751 | Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same | Titash Rakshit, Borna J. Obradovic, Rwik Sengupta, Wei-E Wang, Mark S. Rodder | 2018-07-17 |
| 9858975 | Zero transistor transverse current bi-directional bitcell | — | 2018-01-02 |
| 9741811 | Integrated circuit devices including source/drain extension regions and methods of forming the same | Borna J. Obradovic | 2017-08-22 |
| 9711414 | Strained stacked nanosheet FETS and/or quantum well stacked nanosheet | Robert C. Bowen, Mark S. Rodder, Borna J. Obradovic, Joon Goo Hong | 2017-07-18 |
| 9614002 | 0T bi-directional memory cell | Titash Rakshit, Borna J. Obradovic, Jorge A. Kittl, Joon Goo Hong | 2017-04-04 |
| 9525053 | Integrated circuit devices including strained channel regions and methods of forming the same | Mark S. Rodder, Robert C. Bowen, Jorge A. Kittl | 2016-12-20 |
| 9461114 | Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same | Borna J. Obradovic, Robert C. Bowen, Mark S. Rodder | 2016-10-04 |
| 9431529 | Confined semi-metal field effect transistor | Jorge A. Kittl, Robert C. Bowen | 2016-08-30 |
| 9123607 | Modified hybrid infrared focal plane array architecture for large scaling | Brent M. Segal, Robert C. Bowen, Jonathan W. Ward | 2015-09-01 |