KK

Ki-Nam Kim

Samsung: 122 patents #289 of 75,807Top 1%
HM Hyundai Motor: 16 patents #623 of 11,886Top 6%
KAIST: 6 patents #2,093 of 11,619Top 20%
KM Kia Motors: 5 patents #1,117 of 7,429Top 20%
CC Corning Precision Materials Co.: 4 patents #18 of 154Top 15%
AS Ap Systems: 2 patents #4 of 32Top 15%
CI Corning Incorporated: 2 patents #1,705 of 3,867Top 45%
HC Hyundai Mobis Co.: 1 patents #729 of 1,496Top 50%
HI Hyundai Dymos Incorporated: 1 patents #57 of 141Top 45%
KI Korea Atomic Energy Research Institute: 1 patents #426 of 972Top 45%
MM Mando Machinery: 1 patents #9 of 67Top 15%
SC Samung Electronics Co.: 1 patents #1 of 94Top 2%
BL Bluebird: 1 patents #11 of 15Top 75%
Overall (All Time): #5,477 of 4,157,543Top 1%
159
Patents All Time

Issued Patents All Time

Showing 101–125 of 159 patents

Patent #TitleCo-InventorsDate
7042760 Phase-change memory and method having restore function Young-Nam Hwang, Su-Jin Ahn 2006-05-09
6979881 Ferroelectric integrated circuit devices having an oxygen penetration path Heung-Jin Joo, Yoon-Jong Song 2005-12-27
6972422 Method for measuring particles in glass substrate Chang Ha Lee, Taek Cheon Kim, Suk Joon Kim, Ga-Hyun Kim, Ji Hwa Jung 2005-12-06
6969658 Methods providing oxide layers having reduced thicknesses at central portions thereof Chang-Hyun Cho, Min-Hee Cho 2005-11-29
6967860 Ferroelectric memory device and control method thereof Mun-Kyu Choi, Byung-Jun Min, Byung-Gil Jeon 2005-11-22
6961271 Memory device in which memory cells having complementary data are arranged Byung-Gil Jeon, Mun-Kyu Choi 2005-11-01
6953959 Integrated circuit devices including self-aligned contacts with increased alignment margin Won-Suk Yang 2005-10-11
6949429 Semiconductor memory device and method for manufacturing the same Byung-Jun Park 2005-09-27
6929997 Triple metal line 1T/1C ferroelectric memory device and method for fabrication thereof Dong-Jin Jung 2005-08-16
6911362 Methods for forming electronic devices including capacitor structures Yoon-Jong Song, Heung-Jin Joo 2005-06-28
6911740 Semiconductor device having increased gaps between gates Yoon-soo Chun, Dong-Won Shin 2005-06-28
6909134 Ferroelectric memory device using via etch-stop layer and method for manufacturing the same Yoon-Jong Song, Sang-Woo Lee 2005-06-21
6900546 Semiconductor memory device and method for manufacturing the same Won-Suk Yang, Sang-Hoo Song, Hong-Sik Jeong 2005-05-31
6852581 Methods of manufacturing a semiconductor device having increased gaps between gates Yoon-soo Chun, Dong-Won Shin 2005-02-08
6847537 Ferroelectric memory devices having a plate line control circuit and methods for operating the same Byung-Gil Jeon 2005-01-25
6844583 Ferroelectric memory devices having expanded plate lines Hyun-Ho Kim, Dong-Jin Jung, Sang-Don Nam, Kyu-Mann Lee 2005-01-18
6836019 Semiconductor device having multilayer interconnection structure and manufacturing method thereof Won-Suk Yang, Hong-Sik Jeong 2004-12-28
6828617 Method for fabricating a capacitor of a semiconductor device and a capacitor made thereby Hyung-Soo Uh, Sang-Ho Song 2004-12-07
6828611 Integrated circuit ferroelectric memory devices including plate lines directly on ferroelectric capacitors Hyun-Ho Kim 2004-12-07
6825082 Ferroelectric memory device and method of forming the same Yoon-Jong Song 2004-11-30
6822335 Method for arranging wiring line including power reinforcing line and semiconductor device having power reinforcing line Won-Suk Yang, Jae-Young Lee, Chang-Hyun Cho 2004-11-23
6815300 Method for manufacturing semiconductor device having increased effective channel length Hong-Sik Jeong, Yoo-Sang Hwang 2004-11-09
6812572 Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof Won-Suk Yang, Sang-Ho Song, Hong-Sik Jeong 2004-11-02
6787906 Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region Won-Suk Yang, Sang-Ho Song, Hong-Sik Jeong 2004-09-07
6767787 Methods of forming integrated circuits using masks to provide ion implantation shielding to portions of a substrate adjacent to an isolation region therein Gwan-byeob Koh 2004-07-27