BM

Byung-Sik Moon

Samsung: 19 patents #7,060 of 75,807Top 10%
📍 Seoul, KR: #3,031 of 39,741 inventorsTop 8%
Overall (All Time): #239,310 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
9245827 3D semiconductor device Uk-Song Kang, Dong-Hyeon Jang, Seong-Jin Jang, Hoon Lee, Jin Ho Kim +2 more 2016-01-26
8848475 Fuse circuit, fuse array, semiconductor memory device and method of manufacturing semiconductor device Jong-Pil Son, Seong-Jin Jang, Hyuck-Chai Jung, Ju-Seop Park 2014-09-30
8743582 3D semiconductor device Uk-Song Kang, Dong-Hyeon Jang, Seong-Jin Jang, Hoon Lee, Jin Ho Kim +2 more 2014-06-03
8599635 Fuse circuit and semiconductor memory device including the same Jin Ho Kim, Jong-Pil Son, Seong-Jin Jang, Seung Hoon Oh, Ju-Seop Park 2013-12-03
8547763 Memory cell, methods of manufacturing memory cell, and memory device having the same Jong-Pil Son, Seong-Jin Jang, Doo Young Kim, Ju-Seop Park 2013-10-01
8514648 Anti-fuse, anti-fuse circuit including the same, and method of fabricating the anti-fuse Jong-Pil Son, Seong-Jin Jang, Doo Young Kim, Hyoung-Joo Kim, Ju-Seop Park 2013-08-20
8495437 Semiconductor memory device Kyo-Min Sohn 2013-07-23
8482989 Semiconductor device including fuse array and method of operation the same Jong-Pil Son, Seong-Jin Jang, Ju-Seop Park 2013-07-09
8045404 Semiconductor memory device capable of preventing damage to a bitline during a data masking operation Byung-Hyun Lee, Seung-Bum Ko 2011-10-25
7898881 Semiconductor memory device and data sensing method thereof Jung-Hwa Choi 2011-03-01
7692995 Redundancy program circuit and methods thereof Jeong-Sik Nam, Sang-Kyun Park, Kwang-Hyun Kim, Won-Chang Jung 2010-04-06
7609580 Redundancy program circuit and methods thereof Jeong-Sik Nam, Sang-Kyun Park, Kwang-Hyun Kim, Won-Chang Jung 2009-10-27
7606090 Redundancy program circuit and methods thereof Jeong-Sik Nam, Sang-Kyun Park, Kwang-Hyun Kim, Won-Chang Jung 2009-10-20
7477565 Redundancy program circuit and methods thereof Jeong-Sik Nam, Sang-Kyun Park, Kwang-Hyun Kim, Won-Chang Jung 2009-01-13
7307910 Redundancy program circuit and methods thereof Jeong-Sik Nam, Sang-Kyun Park, Kwang-Hyun Kim, Won-Chang Jung 2007-12-11
7245542 Memory device having open bit line cell structure using burn-in testing scheme and method therefor Ki Won Park 2007-07-17
7027339 Memory device employing open bit line architecture for providing identical data topology on repaired memory cell block and method thereof Dong-Hak Shin, Ho-Sung Song 2006-04-11
6304500 Integrated circuit memory devices having data input and output lines extending in the column direction, and circuits and methods for repairing faulty cells Kye-hyun Kyung 2001-10-16
6151263 Integrated circuit memory devices having data input and output lines extending along the column direction Kye-hyun Kyung 2000-11-21