Issued Patents All Time
Showing 51–75 of 77 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8344422 | Semiconductor device | Yuji Ando, Yasuhiro Okamoto, Kazuki Ota, Takashi Inoue, Hironobu Miyamoto | 2013-01-01 |
| 8198652 | Field effect transistor with reduced gate leakage current | Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Takashi Inoue, Yasuhiro Murase +3 more | 2012-06-12 |
| 7985984 | III-nitride semiconductor field effect transistor | Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Takashi Inoue | 2011-07-26 |
| 7973335 | Field-effect transistor having group III nitride electrode structure | Yasuhiro Okamoto, Hironobu Miyamoto, Yuji Ando, Takashi Inoue, Masaaki Kuzuhara | 2011-07-05 |
| 7863648 | Field effect transistor | Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Takashi Inoue, Kazuki Ota +6 more | 2011-01-04 |
| 7859014 | Semiconductor device | Hironobu Miyamoto, Yuji Ando, Masaaki Kuzuhara, Yasuhiro Okamoto, Takashi Inoue +1 more | 2010-12-28 |
| 7800131 | Field effect transistor | Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Takashi Inoue, Kazuki Ota +6 more | 2010-09-21 |
| 7615868 | Electrode, method for producing same and semiconductor device using same | Hironobu Miyamoto, Yuji Ando, Takashi Inoue, Yasuhiro Okamoto, Masaaki Kuzuhara | 2009-11-10 |
| 7459788 | Ohmic electrode structure of nitride semiconductor device | Yuji Ando, Hironobu Miyamoto, Masaaki Kuzuhara, Yasuhiro Okamoto, Takashi Inoue +1 more | 2008-12-02 |
| 7323783 | Electrode, method for producing same and semiconductor device using same | Hironobu Miyamoto, Yuji Ando, Takashi Inoue, Yasuhiro Okamoto, Masaaki Kuzuhara | 2008-01-29 |
| 7256432 | Field-effect transistor | Yasuhiro Okamoto, Hironobu Miyamoto, Yuji Ando, Takashi Inoue, Masaaki Kuzuhara | 2007-08-14 |
| 7071526 | Semiconductor device having Schottky junction electrode | Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Kensuke Kasahara, Masaaki Kuzuhara | 2006-07-04 |
| 7052790 | Fuel cell system and operation method having a condensed water tank open to atmosphere | Akinari Nakamura, Tetsuya Ueda, Masataka Ozeki | 2006-05-30 |
| 6765241 | Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances | Yasuo Ohno, Nobuyuki Hayama, Kensuke Kasahara, Hironobu Miyamoto, Yuji Takahashi +3 more | 2004-07-20 |
| 6552373 | Hetero-junction field effect transistor having an intermediate layer | Yuji Ando, Hironobu Miyamoto, Naotaka Iwata, Koji Matsunaga, Masaaki Kuzuhara +5 more | 2003-04-22 |
| 6492669 | Semiconductor device with schottky electrode having high schottky barrier | Yuji Ando, Hironobu Miyamoto, Kazuaki Kunihiro, Yuji Takahashi, Kensuke Kasahara +4 more | 2002-12-10 |
| 6465814 | Semiconductor device | Kensuke Kasahara, Yasuo Ohno, Masaaki Kuzuhara, Hironobu Miyamoto, Yuji Ando +4 more | 2002-10-15 |
| 6440822 | Method of manufacturing semiconductor device with sidewall metal layers | Nobuyuki Hayama, Masaaki Kuzuhara, Kouji Matsunaga, Yuji Takahashi, Yasuo Ohno +4 more | 2002-08-27 |
| 6441391 | Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate | Yasuo Ohno, Nobuyuki Hayama, Kensuke Kasahara, Hironobu Miyamoto, Yuji Takahashi +3 more | 2002-08-27 |
| 6291842 | Field effect transistor | — | 2001-09-18 |
| 5907164 | InAlAs/InGaAs heterojunction field effect type semiconductor device | — | 1999-05-25 |
| 5856685 | Heterojunction field effect transistor | — | 1999-01-05 |
| 5847409 | Semiconductor device with superlattice-structured graded buffer layer and fabrication method thereof | — | 1998-12-08 |
| 5801405 | Field effect transistor | Hironobu Miyamoto | 1998-09-01 |
| 5608239 | Field effect transistor | Hironobu Miyamoto | 1997-03-04 |