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Static random access memory (SRAM) bit cell circuits with a minimum distance between a storage circuit active region and a read port circuit active region to reduce area and SRAM bit cell array circuits |
Rahul Biradar, Sunil Sharma, Channappa Desai |
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Static random access memory (SRAM) bit cells employing asymmetric width read and write word lines, and related methods |
Sunil Sharma, Rahul Biradar |
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Determining a voltage and/or frequency for a performance mode |
Changho Jung, Chulmin Jung |
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Write driver and pre-charge circuitry for high performance pseudo-dual port (PDP) memories |
Changho Jung |
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Efficient sense amplifier shifting for memory redundancy |
Changho Jung |
2018-02-27 |
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Timing circuit for memories |
Changho Jung |
2018-01-02 |
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Overlapping precharge and data write |
Changho Jung |
2017-06-20 |
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Structures and methods for extraction of device channel width |
Randy W. Mann, Sandeep Puri, Anuj Gupta, Xusheng Wu |
2017-02-07 |
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Device resulting from printing minimum width semiconductor features at non-minimum pitch |
Randy W. Mann, Norman Chen, Shaowen Gao |
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Printing minimum width semiconductor features at non-minimum pitch and resulting device |
Randy W. Mann, Norman Chen, Shaowen Gao |
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Fast cyclic decoder circuit for FIFO/LIFO data buffer |
Animesh Jain, Nagendra Chandrakar |
2012-08-07 |