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Home › Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG

Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG

US Patent RE40507 · Granted Sep 16, 2008

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