{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Uniaxially strained nanowire structure", "item": "https://www.patentleaderboard.com/patent/9905650"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Uniaxially strained nanowire structure

Uniaxially strained nanowire structure

US Patent 9905650 · Granted Feb 27, 2018

Estimated economic value: $23,267,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method for fabricating the same2025
Integration methods to fabricate internal spacers for nanowire devices2025
Device, method and system to provide a stressed channel of a transistor2025
Gate-all-around integrated circuit structures having high mobility2025
Vertical integration scheme and circuit elements architecture for area scaling o2025
Vertical integration scheme and circuit elements architecture for area scaling o2025
Gate-all-around integrated circuit structures having insulator substrate2025
Gate contact structure over active gate and method to fabricate same2025
Forksheet transistors with dielectric or conductive spine2025
Fin doping and integrated circuit structures resulting therefrom2025
Neighboring gate-all-around integrated circuit structures having conductive cont2025
Wrap-around contact structures for semiconductor nanowires and nanoribbons2024