Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dry plasma etch method to pattern MRAM stack

Dry plasma etch method to pattern MRAM stack

US Patent 9806252 · Granted Oct 31, 2017

Estimated economic value: $46,599,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photoresist development with halide chemistries2025
Photoresist development with halide chemistries2025
Cyclic development of metal oxide based photoresist for etch stop deterrence2025
Underlayer for photoresist adhesion and dose reduction2025
Integration of dry development and etch processes for EUV patterning in a single2025
High density, modulus, and hardness amorphous carbon films at low pressure2025
Endoscopic multifunctional accessory channel device2025
Method for cleaning a chamber2025
Method for cleaning a chamber2025
Tin oxide films in semiconductor device manufacturing2025
Method of cleaning chamber components with metal etch residues2025
Method of cleaning chamber components with metal etch residues2025